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AssigneesAsahi Kasei Kabushiki Kaisha, Shinko Seiki Company, Limited
InventorsTsuneharu Tanaka, Kohei Murakami, Akira Nagayasu
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In order to enable generation of plasma with higher density in a container with larger capacity, a plasma generating device according to this disclosure is includes a high-frequency circuit (20) having an inductive load and a high-frequency power supply (22) which supplies high-frequency power to the inductive load and a reaction container which is configured capable of pressure reduction and in which plasma is generated by applying the high-frequency power to the inductive load. The inductive load is constituted by a spiral antenna coil (21) disposed so as to surround a periphery of the reaction container, and the antenna coil is divided into at least two or more parts. The high-frequency circuit (20) has a plurality of paths (23) on which each of the antenna coils (21) divided into at least two or more parts is provided.
A plasma processing device comprising a high-frequency circuit having an inductive load and a high-frequency power supply which supplies high-frequency power to the inductive load and a reaction container which is configured capable of pressure reduction and in which plasma is generated by applying the high-frequency power to the inductive load, wherein
A plasma etching device for seamless roller mold, comprising:
Dependencies are inferred from the claim text.