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US 12,537,508 B2Granted
Acoustic wave device
AssigneeMurata Manufacturing Co., Ltd.
InventorHideki Iwamoto
Life of this patent
Estimating the term…
Abstract
An acoustic wave device includes a supporting substrate, a piezoelectric layer, and an IDT electrode. The piezoelectric layer is on the supporting substrate. The IDT electrode is on the piezoelectric layer. The supporting substrate is a silicon carbide substrate, which has a hexagonal crystal structure. The acoustic wave device uses an SH wave as a main mode.
Claims16
An acoustic wave device comprising:
- a supporting substrate;
- a piezoelectric layer on the supporting substrate;
- and
- an IDT electrode on the piezoelectric layer;
- wherein
- the supporting substrate is a silicon carbide substrate with a hexagonal crystal structure;
- a major surface of the silicon carbide substrate is one of an a-plane and an m-plane;
- a propagation angle ψSiC in the silicon carbide substrate is within a range of about 30° or greater and about 70° or less or within a range of about 110° or greater and about 150° or less, where the propagation angle ψSiC is an angle at which an acoustic wave propagates;
- the piezoelectric layer includes lithium tantalate;
- and
- the acoustic wave device is configured to use an SH wave as a main mode.
8 more elements
An acoustic wave device comprising:
- a supporting substrate;
- a piezoelectric layer on the supporting substrate;
- and
- an IDT electrode on the piezoelectric layer;
- wherein
- the supporting substrate is a silicon carbide substrate with a hexagonal crystal structure;
- a major surface of the silicon carbide substrate is an r-plane;
- a propagation angle ψSiC in the silicon carbide substrate is within a range of about 0° or greater and about 55° or less or within a range of about 115° or greater and about 170° or less, where the propagation angle ψSiC is an angle at which an acoustic wave propagates;
- the piezoelectric layer includes lithium tantalate;
- and
- the acoustic wave device is configured to use an SH wave as a main mode.
8 more elements
An acoustic wave device comprising:
- a supporting substrate;
- a piezoelectric layer on the supporting substrate;
- and
- an IDT electrode on the piezoelectric layer;
- wherein the supporting substrate is a silicon carbide substrate with a hexagonal crystal structure;
- a major surface of the silicon carbide substrate is one of an a-plane and an m-plane;
- a propagation angle ψSiC in the silicon carbide substrate is within a range of about 0° or greater and about 30° or less, within a range of about 70° or greater and about 110° or less, or within a range of about 150° or greater and about 180° or less, where the propagation angle ψSiC is an angle at which an acoustic wave propagates;
- the piezoelectric layer includes lithium niobate;
- and
- the acoustic wave device is configured to use an SH wave as a main mode.
7 more elements
An acoustic wave device comprising:
- a supporting substrate;
- a piezoelectric layer on the supporting substrate;
- and
- an IDT electrode on the piezoelectric layer;
- wherein
- the supporting substrate is a silicon carbide substrate with a hexagonal crystal structure;
- a major surface of the silicon carbide substrate is an r-plane;
- a propagation angle ψSiC in the silicon carbide substrate is within a range of about 0° or greater and about 25° or less or within a range of about 105° or greater and about 140° or less, where the propagation angle ψSiC is an angle at which an acoustic wave propagates;
- the piezoelectric layer includes lithium niobate;
- and
- the acoustic wave device is configured to use an SH wave as a main mode.
8 more elements
Dependencies are inferred from the claim text.