Multi-beam semiconductor laser device and method of manufacturing the same
AssigneeUshio Denki Kabushiki Kaisha
InventorsTadashi Okumura, Shigeta Sakai
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Abstract
An edge-emitting multi-beam semiconductor laser device includes a layered structure including a substrate, an n-type cladding layer, a light-emitting layer, and a p-type cladding layer. The layered structure has m regions (m≥2) that are adjacent in a first direction, and a sum of a height of the substrate and a height of the first conductive cladding layer is different in each of the m regions, n laser resonators (2≤n≤m) each having a ridge stripe structure extending in a second direction orthogonal to the first direction are formed in the n regions among the m regions, and at least two of the n laser resonators have different oscillation wavelengths among the n laser resonators.
Claims19
A multi-beam semiconductor laser device that is an edge-emitting multi-beam semiconductor laser device, the multi-beam semiconductor laser device comprising:
- a layered structure including a substrate, a first conductive cladding layer, a light-emitting layer, and a second conductive cladding layer,
- wherein the layered structure has m regions (m>2) including a first m region, a second m region and a third m region that are adjacent in a first direction, and a sum of a first height of the substrate and a second height of the first conductive cladding layer is different in each of the m regions, the first height and the second height having a positive value,
- and wherein n laser resonators (2≤n<m) each having a ridge stripe structure extending in a second direction orthogonal to the first direction are formed in the n regions among the m regions, the second m regions lacking the ridge stripe structure and being located between the first m region and the third m region,
- and wherein at least two of the n laser resonators have different oscillation wavelengths among the n laser resonators.
A method of manufacturing an edge-emitting multi-beam semiconductor laser device, the method comprising:
- forming a base structure including a substrate having a first thickness and a first conductive cladding layer having a second thickness, the first thickness and the second thickness having a positive value, the base structure having a different thickness in each of m regions (m≥2) adjacent in a first direction;
- forming a light-emitting layer and a second conductive cladding layer on the base structure;
- and
- forming n laser resonators each having a ridge stripe structure extending in a second direction orthogonal to the first direction in n regions of the m regions (2≤n≤m).
A multi-beam semiconductor laser device that is an edge-emitting multi-beam semiconductor laser device, the multi-beam semiconductor laser device comprising:
- a layered structure including a substrate, a first conductive cladding layer, a light-emitting layer, and a second conductive cladding layer,
- wherein the layered structure has m regions (m>2) that are adjacent in a first direction, and a sum of a first height of the substrate and a second height of the first conductive cladding layer is different in each of the m regions, the first height and the second height having a positive value,
- and wherein each of the m regions has a laser resonator having an emitter in a ridge stripe structure extending in a second direction orthogonal to the first direction are formed in each of the m regions,
- wherein at least two of the n laser resonators have different oscillation wavelengths among the n laser resonators.
Dependencies are inferred from the claim text.