Ion trap chip and system
AssigneeHuawei Technologies Co., Ltd.
InventorsDongyang Cao, Jian Pan, Yuping Wu, Yongjing Cai
Life of this patent
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Abstract
Example ion trap chips and quantum computing methods are described. One example ion trap chip includes a plurality of first ion traps and a plurality of second ion traps. Each first ion trap is configured to store an operation ion, where two adjacent first ion traps form one ion trap group. Each second ion trap corresponds to one ion trap group. Each second ion trap is configured to perform quantum operations of operation ions stored in a corresponding ion trap group, and each second ion trap is located between two first ion traps in a corresponding ion trap group. Operation ions stored in first ion traps in an ion trap group are transported to a corresponding second ion trap along a straight line.
Claims19
An ion trap chip, comprising:
- a controller;
- a plurality of first ion traps, each first ion trap of the plurality of first ion traps is operated by the controller to be configured to store an operation ion and an ancillary ion, wherein two first ion traps that are adjacent to each other within the plurality of first ion traps form one ion trap group, each first ion trap of the plurality of first ion traps comprises at least one first alternating current electrode and a plurality of first direct current electrodes surrounding the at least one first alternating current electrode such that the operation and ancillary ions are trapped on the alternating current electrode by the potentials from the electrostatic fields generated by the first direct current electrodes;
- a plurality of second ion traps, wherein each second ion trap of the plurality of second ion traps corresponds to one ion trap group and is operated by the controller to be configured to perform quantum operations of operation ions stored in a corresponding ion trap group, and each second ion trap is located between two first ion traps in a corresponding ion trap group, wherein operation ions stored in corresponding first ion traps in an ion trap group are transported to a corresponding second ion trap along a straight line, and wherein each second ion trap in an ion trap group is operated by the controller to be configured to store two operation ions transported from two corresponding first ion traps;
- and
- wherein the ancillary ion is a strontium ion or a barium ion and the operation ion is a calcium ion or a beryllium ion.
A quantum computing method applied to an ion trap chip, wherein the ion trap chip comprises a plurality of first ion traps, a plurality of second ion traps, a plurality of first optical waveguides, and a plurality of second optical waveguides, wherein each first ion trap of the plurality of first ion traps is configured to store an operation ion and an ancillary ion, wherein two first ion traps that are adjacent to each other within the plurality of first ion traps form one ion trap group, and each second ion trap of the plurality of second ion traps corresponds to one ion trap group, wherein operation ions stored in first ion traps in an ion trap group are transported to a corresponding second ion trap along a straight line, each second ion trap in an ion trap group is configured to store two operation ions transported from two corresponding first ion trap, each first ion trap of the plurality of first ion traps comprises at least one first alternating current electrode and a plurality of first direct current electrodes surrounding the at least one first alternating current electrode, and each second ion trap comprises a plurality of second direct current electrodes, such that the operation and ancillary ions are trapped on the alternating current electrode by the potentials from the electrostatic fields generated by the first direct current electrodes, wherein the ancillary ion is a strontium ion or a barium ion and the operation ion is a calcium ion or a beryllium ion;
- and the quantum computing method comprises:
- outputting, by a plurality of first direct current electrodes in a first ion trap, voltages to transport an operation ion in the first ion trap to a corresponding second ion trap;
- transmitting, by a second optical waveguide, an operation laser to irradiate the operation ion;
- and
- outputting, by a plurality of second direct current electrodes in the corresponding second ion trap, voltages to transport the operation ion in the corresponding second ion trap to the first ion trap.
A non-transitory computer storage medium, wherein the non-transitory computer storage medium stores computer-executable instructions, and when the computer-executable instructions are invoked by a computer, the computer is enabled to perform a method applied to an ion trap chip, wherein the ion trap chip comprises a plurality of first ion traps, a plurality of second ion traps, a plurality of first optical waveguides, and a plurality of second optical waveguides, wherein each first ion trap of the plurality of first ion traps is configured to store an operation ion and an ancillary ion, wherein two first ion traps that are adjacent to each other within the plurality of first ion traps form one ion trap group, and each second ion trap of the plurality of second ion traps corresponds to one ion trap group, wherein operation ions stored in first ion traps in an ion trap group are transported to a corresponding second ion trap along a straight line, each second ion trap in an ion trap group is configured to store two operation ions transported from two corresponding first ion traps, each first ion trap of the plurality of first ion traps comprises at least one first alternating current electrode and a plurality of first direct current electrodes surrounding the at least one first alternating current electrode, and each second ion trap comprises a plurality of second direct current electrodes, such that the operation and ancillary ions are trapped on the alternating current electrode by the potentials from the electrostatic fields generated by the first direct current electrodes, wherein the ancillary ion is a strontium ion or a barium ion and the operation ion is a calcium ion or a beryllium ion;
- and the method comprises:
- outputting, by a plurality of first direct current electrodes in a first ion trap, voltages to transport an operation ion in the first ion trap to a corresponding second ion trap;
- transmitting, by a second optical waveguide, an operation laser to irradiate the operation ion;
- and
- outputting, by a plurality of second direct current electrodes in the corresponding second ion trap, voltages to transport the operation ion in the corresponding second ion trap to the first ion trap.
A quantum computing system, wherein the quantum computing system comprises at least one ion trap chip and at least one controller, wherein the at least one controller is configured to control the ion trap chip, wherein the ion trap chip comprises:
- a plurality of first ion traps, each first ion trap of the plurality of first ion traps is configured to store an operation ion and an ancillary ion, wherein two first ion traps that are adjacent to each other within the plurality of first ion traps form one ion trap group, each first ion trap of the plurality of first ion traps comprises at least one first alternating current electrode and a plurality of first direct current electrodes surrounding the at least one first alternating current electrode;
- and
- a plurality of second ion traps, wherein each second ion trap of the plurality of second ion traps corresponds to one ion trap group and is configured to perform quantum operations of operation ions stored in a corresponding ion trap group, and each second ion trap is located between two first ion traps in a corresponding ion trap group, wherein operation ions stored in corresponding first ion traps in an ion trap group are transported to a corresponding second ion trap along a straight line, and wherein each second ion trap in an ion trap group is configured to store two operation ions transported from two corresponding first ion traps;
- such that the operation and ancillary ions are trapped on the alternating current electrode by the potentials from the electrostatic fields generated by the first direct current electrodes, wherein the ancillary ion is a strontium ion or a barium ion and the operation ion is a calcium ion or a beryllium ion.
Dependencies are inferred from the claim text.