Memory device, operating method of memory device, and memory system including memory device

An operating method of a memory device including a memory cell array, the operating method comprising:

• receiving first data read from the memory cell array including a plurality of memory cells arranged in a plurality of rows in response to a read command;
• generating a first syndrome for the first data;
• generating information on a first error included in the first data based on the first syndrome and vulnerable row data including a location of an estimation error corresponding to a vulnerable row among the plurality of rows;
• generating second data by correcting the first error;
• and
• generating a decoding flag indicating a decoding state based on the vulnerable row data, the information on the first error, and the second data.

A memory system comprising:

• a memory controller configured to transmit a read command and receive a decoding flag indicating a decoding state of a memory device in response to the read command;
• and
• a memory device including a memory cell array having a plurality of memory cells arranged in a plurality of rows, and the memory device configured to:
• read first data from the memory cell array in response to the read command,
• decode the first data based on vulnerable row data including a location of an estimation error corresponding to a vulnerable row among the plurality of rows to generate information on a first error included in the first data,
• correct the first error to generate second data, and
• generate the decoding flag indicating the decoding state based on the vulnerable row data, the information on the first error, and the second data.