EUV lithography mask with a porous reflective multilayer structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Tsung Shih, Shih-Chang Shih, Li-Jui Chen, Po-Chung Cheng
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Abstract
A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.
Claims20
An apparatus, comprising:
- a substrate;
- a first layer disposed over the substrate in a first direction;
- a plurality of structures disposed over the first layer in the first direction, wherein the structures are separated from one another in a second direction, and wherein each of the structures has an upper surface and a lower surface that is positionally offset from the upper surface in the second direction;
- a further layer disposed over the plurality of structures in the first direction;
- and
- a plurality of further structures disposed over the further layer in the first direction, wherein the further structures are separated from one another in the second direction, and wherein each of the further structures has a further upper surface and a further lower surface that is positionally offset from the further upper surface in the second direction;
- wherein the apparatus includes an extreme ultraviolet (EUV) lithography mask.
A method, comprising:
- accessing an extreme ultraviolet (EUV) lithography mask that includes a first layer and a plurality of structures located over the first layer in a first direction, wherein the structures are separated from one another by a plurality of gaps in a second direction, and wherein each of the structures has a second layer and a first silicide material disposed over an upper surface of the second layer and a second silicide material disposed below a lower surface of the second layer, wherein the first silicide material is positionally offset from the second silicide material in the second direction;
- and
- performing an EUV lithography process via the lithography mask.
An apparatus, comprising:
- a substrate;
- a molybdenum-containing layer disposed over the substrate in a vertical direction;
- and
- a structure of silicon-containing components disposed over the molybdenum-containing layer in the vertical direction, wherein the silicon-containing components are separated from one another in a lateral direction, and wherein each of the silicon-containing components has a tapered side surface.
Dependencies are inferred from the claim text.