US 12,535,522 B2 · Wafer scale active thermal interposer for device testing

Abstract

An apparatus for use in testing an integrated circuit semiconductor wafer device under test (wafer DUT) includes a probe configured to probe a surface of the wafer DUT during testing thereof, a thermal interposer (TI) including a heater layer arranged with a plurality of zones corresponding to a plurality of areas of the wafer DUT, the TI configured to come into proximity to a surface of the wafer DUT and further configured to selectively heat the plurality of areas by selectively heating the plurality of zones, the heater layer including a plurality of heating elements configured to correspond to the plurality of zones, and a plurality of temperature measurement devices configured to correspond to the plurality of zones, a cold plate disposed in proximity to the TI and configured to selectively cool the plurality of areas of the wafer DUT, and a thermal controller configured to control selective cooling of the cold plate and configured to control selective heating of the plurality of heating elements of the TI during the testing.

Claims30

Dependent claims

An apparatus for use in testing an integrated circuit semiconductor wafer device under test (wafer DUT), the apparatus comprising:

a probe configured to probe a surface of said wafer DUT during testing thereof;
a thermal interposer (TI) comprising a top surface and a bottom surface, and further comprising a heater layer arranged with a plurality of zones corresponding to a plurality of areas of said wafer DUT, said TI configured to come into proximity to a surface of said wafer DUT and further configured to selectively heat said plurality of areas by selectively heating said plurality of zones, said heater layer comprising:
a plurality of heating elements configured to correspond to said plurality of zones;
and
a plurality of temperature measurement devices configured to correspond to said plurality of zones;
a cold plate disposed in proximity to said TI and configured to selectively cool said plurality of areas of said wafer DUT;
and
a thermal controller configured to control selective cooling of said cold plate and configured to control selective heating of said plurality of heating elements of said TI during said testing.

5 more elements

A method of temperature regulation of an integrated circuit semiconductor wafer device under test (DUT) during testing thereof, the method comprising:

probing said wafer DUT during said testing using a wafer probe;
and
in conjunction with said testing, selectively heating a plurality of areas of said wafer DUT using a thermal controller controlling a thermal interposer, wherein said thermal interposer comprises a top surface and a bottom surface, disposed in proximity to said wafer DUT, to selectively heat a plurality of separately controllable thermal zones arranged in a heater layer of said thermal interposer, wherein said thermal controller is responsive to temperature measurements from a plurality of temperature measurement devices comprised in said heater layer;
and
in conjunction with said testing, selectively cooling said plurality of areas of said wafer DUT using said thermal controller controlling a cold plate, said cold plate disposed in proximity to said wafer DUT.

2 more elements

Dependencies are inferred from the claim text.

Wafer scale active thermal interposer for device testing

Life of this patent

Wafer scale active thermal interposer for device testing

Life of this patent

Abstract

Claims30