Back to results
US 12,535,519 B2Granted
Devices and methods for noise testing of a substrate including through silicon vias
AssigneeShanghai United Imaging Microelectronics Technology Co., Ltd.
InventorChangzhi Shi
Life of this patent
Estimating the term…
Abstract
Embodiments of the present disclosure provide a device and a method for noise testing of a substrate including through silicon vias (TSVs). The device may include a substrate including first TSVs; an excitation link including at least two groups of second TSVs; an insulation layer arranged between the excitation link and the substrate; and a testing link including at least one group of third TSVs, the testing link being electrically connected with the substrate.
Claims17
A device, comprising:
- a substrate including first through silicon vias (TSVs);
- an excitation link including at least two groups of second TSVs;
- an insulation layer located under the excitation link and the substrate;
- and
- a testing link including at least one group of third TSVs, the testing link being electrically connected with the substrate;
- wherein an electrical path of the excitation link passes through the at least two groups of second TSVs of the excitation link along an axial direction of a through silicon via (TSV) among the first TSVs, the at least two groups of second TSVs, and the at least one group of third TSVs.
3 more elements
A method implemented on a device including a substrate including first through silicon vias (TSVs);
- an excitation link including at least two groups of second TSVs;
- an insulation layer located under the excitation link and the substrate;
- and a testing link including at least one group of third TSVs, the testing link being electrically connected with the substrate, the method comprising:
- applying a pulse signal to the excitation link;
- obtaining one or more response signals in the testing link;
- wherein the testing link includes one or more testing regions and a grounding region, wherein the one or more testing regions is electrically connected with the grounding area via the substrate, and the at least one group of third TSVs includes a grounding through silicon via (TSV), the grounding region is arranged at the grounding TSV, and the one or more response signals are grounding response signals of the one or more testing regions relative to the grounding region;
- and
- determining, based on the one or more response signals, a noise level and a distribution of a noise of the substrate.
5 more elements
Dependencies are inferred from the claim text.