Semiconductor substrate cleaning method, processed semiconductor substrate manufacturing method, and composition for peeling
AssigneeNissan Chemical Corporation
InventorsTakahisa Okuno, Masaki Yanai, Takuya Fukuda, Hiroto Ogata, Shunsuke Moriya, Hiroshi Ogino, Tetsuya Shinjo
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Abstract
The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (wherein each of L1 and L2 represents a C2 to C4 alkyl group, and L3 represents O or S) in an amount of 80 mass % or more. L1-L3-L2 (L)
Claims6
A semiconductor substrate cleaning method comprising removing an adhesive layer provided on a semiconductor substrate having connection portions made of a conductive material by contacting the adhesive layer with a remover composition, wherein
- the adhesive layer is a film formed from an adhesive composition comprising an adhesive component(S) containing a siloxane adhesive, and the adhesive component(S) comprises a siloxane adhesive containing a polyorganosiloxane component (A) that is curable through hydrosilylation;
- the remover composition contains a solvent but no salt;
- and
- the solvent includes an organic solvent represented by formula (L) in an amount of 80 mass % or more:
- L1-L3-L2 (L)
- where L1 and L2 each represents a C2 to C5 alkyl group, and L3 represents O or S.
Dependencies are inferred from the claim text.