Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films

A method for depositing a silicon and oxygen containing film via flowable chemical vapor deposition (FCVD), the method comprising:

• placing a substrate comprising a surface feature into a reactor wherein the substrate is maintained at one or more temperatures ranging from −20° C. to 400° C. and a pressure of the reactor is maintained at 100 torr or less;
• introducing into the reactor at least one compound selected from the group consisting of Formulae A to E:
• wherein
• R1 is selected from a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 heterocyclic group, and a C4 to C10 aryl group;
• R2 is selected from the group consisting of hydrogen, a C1 to C10 linear alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 heterocyclic group, and a C4 to C10 aryl group, wherein R1 and R2 are either linked to form a cyclic ring structure or are not linked to form a cyclic ring structure;
• R3-10 are each independently selected from hydrogen, a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, and a C4 to C10 aryl group;
• X is selected from the group consisting of a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C4 to C10 aryl group, a C1 to C10 acyl group, —NR1 R2, wherein R1-2 are defined as above, H, Cl, Br, I, F, a C2 to C12 carboxylate group, a C1 to C10 linear or branched alkoxy group, a trimethylsiloxy group, a dimethylsiloxy group, a methylsiloxy group, or a siloxy group, wherein R1 and X are either linked to form a cyclic ring or are not linked to form a cyclic ring;
• providing an oxygen source, a nitrogen source, or an oxygen source and a nitrogen source into the reactor to react with the at least one compound to form a film and cover at least a portion of the surface feature;
• annealing the film at one or more temperatures of 100° C. to 1000° C. to coat at least a portion of the surface feature;
• and
• treating the annealed film with an oxygen source at one or more temperatures ranging from 20° C. to 1000° C. to form a silicon and oxygen containing film on at least a portion of the surface feature.