Core removal

A method of processing substrates, the method comprising:

• a) receiving a substrate comprising:
• i. underlying material,
• ii. cores positioned on the underlying material, the cores having sidewalls that are vertically oriented,
• iii. first spacer material lining the sidewalls of the cores,
• iv. a planarizing layer positioned over the cores and first spacer material, a top portion of the planarizing layer being substantially planar,
• v. a mask layer positioned over the planarizing layer,
• vi. an opening defined in the mask layer and the planarizing layer, the opening positioned above the first spacer material lining one of the sidewalls of one of the cores;
• b) removing the first spacer material at a location corresponding to the opening;
• c) removing the mask layer;
• d) removing the cores and the planarizing layer, thereby forming first spacer features from remaining first spacer material that was not removed in (b), wherein no first spacer feature is formed at the location corresponding to the opening;
• and
• e) depositing a second spacer layer over the first spacer features, wherein (d) and (e) occur in the same reaction chamber, and wherein the substrate is not removed from the reaction chamber between (d) and (e).

A method of processing substrates, the method comprising:

• a) receiving a substrate comprising:
• i. underlying material,
• ii. cores positioned on the underlying material, the cores having sidewalls that are vertically oriented,
• iii. first spacer material lining the sidewalls of the cores, and
• iv. a planarizing layer positioned over the underlying material, the cores, and the first spacer material, wherein the planarizing layer is patterned to form exposed regions and protected regions;
• b) trimming the first spacer material to reduce a thickness of the first spacer material in the exposed regions while the first spacer material in the protected regions remains untrimmed;
• c) removing the planarizing layer and the cores, thereby forming first spacer features from the first spacer material, wherein the first spacer features have non-uniform critical dimensions;
• and
• d) forming a second spacer layer over the first spacer features,
• wherein (c) and (d) occur in the same reaction chamber, and wherein the substrate is not removed from the reaction chamber between (c) and (d).