Vertical transmon structure and its fabrication process
AssigneeInternational Business Machines Corporation
InventorsMasao Tokunari, Naoki Kanazawa, Akihiro Horibe, Kuniaki Sueoka
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Abstract
A vertical transmon qubit structure, includes a substrate having a first surface and a second surface. A through-silicon-via (TSV) is located in the substrate. A first electrode of a Josephson junction (JJ) is located on a portion of the first surface of the substrate and adjacent to the TSV. A second electrode of the JJ is in contact with the TSV and on a second portion of the first surface of the substrate. The first electrode is separated from the second electrode by an insulator.
Claims16
A method of fabricating vertical transmon qubit structure, comprising:
- providing a substrate having a top surface and a bottom surface;
- providing a first layer of aluminum (Al) on the bottom surface the substrate;
- providing a first photoresist layer on portions of the bottom surface of the substrate and the first layer of Al;
- providing a first layer of niobium (Nb) on a bottom side of the substrate;
- providing a second photoresist layer on the top surface of the substrate with an opening in a center portion of the substrate;
- creating a through silicon via (TSV) in the center portion of the substrate by way of etching the substrate in the center portion of the substrate;
- depositing a second layer of Al within the TSV;
- removing portions of the second photoresist layer;
- depositing a second layer of Nb on a top side of the substrate;
- and
- removing the first Nb layer below the first resist layer and the second Nb layer above the second resist layer as well the first and second resist layers.
A method of fabricating vertical transmon qubit structure, comprising:
- providing a substrate having a top surface and a bottom surface;
- providing a first layer of aluminum (Al) on the bottom surface the substrate;
- providing a first photoresist layer on portions of the bottom surface of the substrate and the first layer of Al;
- providing a second photoresist layer on the top surface of the substrate with an opening in a center portion of the substrate;
- providing a first layer of niobium (Nb) on a bottom side of the substrate;
- creating a through silicon via (TSV) in the center portion of the substrate by way of etching the substrate in the center portion of the substrate;
- providing a self-assembled monolayer (SAM) of a third photoresist layer on the bottom side and a top side of the substrate but not in a middle portion of the first photoresist layer;
- depositing a second layer of Al within a base of the TSV;
- removing the third photoresist layer;
- depositing a second layer of Nb on a top side of the substrate;
- and
- removing the first Nb layer below the first resist layer and the second Nb layer above the second resist layer as well the first and second resist layers.
Dependencies are inferred from the claim text.