Method of recovering HgCdTe detector performance after high temperature bias-induced defect generation
AssigneeTeledyne Scientific & Imaging, LLC
InventorsMilap Dalal, Henry Yuan, Chad Shultz, Andrey Rumyantsev
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Abstract
A method of baking a detector, the method comprising: placing a mid-wave infrared detector in an environmental chamber, wherein the environmental chamber is opaque. The mid-wave infrared detector comprises an anode, a guard terminal, and a cathode. The method further comprising connecting the anode to the cathode in a short circuit configuration, heating the environmental chamber to a bake temperature selected in the range of 60 to 70 degrees Celsius, and maintaining the detector in the environmental chamber for a period selected in the range of 72 hours to 240 hours.
Claims9
A method of baking a detector, the method comprising:
- placing a mid-wave infrared detector in an environmental chamber, wherein the environmental chamber is opaque, wherein the mid-wave infrared detector comprises an anode, a guard terminal, and a cathode;
- connecting the anode to the cathode in a short circuit configuration;
- heating the environmental chamber to a bake temperature selected in the range of 60 to 70 degrees Celsius;
- and
- maintaining the detector in the environmental chamber for a period selected in the range of 72 hours to 240 hours.
Dependencies are inferred from the claim text.