Back to results
US 12,532,552 B2Granted
Metasurface-coupled single photon avalanche diode for high temperature operation
AssigneeSivananthan Laboratories, Inc.
InventorsPaul Boieriu, Srinivasan Krishnamurthy, Christoph H Grein
Life of this patent
Estimating the term…
Abstract
A photon avalanche diode, includes a quartz substrate, a doped HgCdTe contact layer on the substrate, an absorbing HgCdTe layer on the contact layer, a larger bandgap HgCdTe layer on the absorbing layer, a doped HgCdTe layer for a top contact layer on the larger bandgap HgCdTe layer, and a non-absorbing HgCdTe metasurface on the top contact layer.
Claims18
A photon avalanche diode, comprising:
- a quartz substrate;
- a doped HgCdTe contact layer on the substrate;
- an absorbing HgCdTe layer on the contact layer;
- a larger bandgap HgCdTe layer on the absorbing layer;
- a doped HgCdTe layer for a top contact layer on the larger bandgap HgCdTe layer;
- and
- a non-absorbing HgCdTe metasurface on the top contact layer.
4 more elements
A photon avalanche diode, comprising:
- a substrate;
- an absorbing layer above the substrate;
- a non-absorbing metasurface above the absorbing layer;
- and
- a larger bandgap multiplication layer between the absorbing layer and the metasurface;
- wherein the larger bandgap multiplication layer comprises HgCdTe.
3 more elements
A photon avalanche diode, comprising:
- a substrate;
- an absorbing layer above the substrate;
- a non-absorbing metasurface above the absorbing layer;
- and
- comprising a multiplication layer on the absorbing layer and a transition layer on the multiplication layer below the metasurface.
2 more elements
A photon avalanche diode, comprising:
- a substrate;
- an absorbing layer above the substrate;
- a non-absorbing metasurface above the absorbing layer;
- and
- wherein the absorbing layer is approximately 100 nm-thick or thinner.
2 more elements
Dependencies are inferred from the claim text.