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US 12,531,216 B2Granted
Support unit and substrate processing apparatus including same
AssigneePsk Inc.
InventorYong Soo Yang
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a substrate processing apparatus. The substrate processing apparatus includes a chamber defining a processing space, a gas supply unit supplying a process gas to the processing space, and a support unit supporting a substrate in the processing space, wherein the support unit includes a chuck supporting the substrate, a power applying RF power to the chuck, and an ionization path through which static electricity generated in the chuck is removed.
Claims11
A substrate processing apparatus comprising:
- a chamber defining a processing space;
- a gas supply unit supplying a process gas to the processing space;
- and
- a support unit supporting a substrate in the processing space,
- wherein the support unit comprises:
- a chuck supporting the substrate;
- a power applying radio frequency (RF) power to the chuck;
- and
- a temperature control member controlling a temperature of the chuck;
- wherein the temperature control member comprises:
- a fluid supply source supplying a fluid for controlling a temperature of the chuck;
- a supply line supplying the fluid from the fluid supply source to a flow path formed in the chuck;
- and
- a collection line returning the fluid from the flow path to the fluid supply source,
- wherein the supply line comprises a first supply line connected to the fluid supply source and a second supply line connected to the chuck,
- wherein the collection line comprises a first collection line connected to the fluid supply source and a second collection line connected to the chuck,
- wherein the first supply line and the first collection line are electrically conductive and grounded to remove static electricity during fluid flow, and
- wherein the second supply line and the second collection line are formed of an electrically insulating material to electrically isolate the chamber from the chuck.
15 more elements
A support unit in a chamber for processing a substrate by using plasma, the support unit comprising:
- a chuck supporting the substrate;
- a power applying radio frequency (RF) power to the chuck;
- a ground member forming an ionization path through which static electricity generated in the chuck is removed;
- and
- a temperature control member controlling a temperature of the chuck
- wherein the temperature control member comprises:
- a fluid supply source supplying a fluid for controlling a temperature of the chuck;
- a supply line supplying the fluid from the fluid supply source to a flow path formed in the chuck;
- and
- a collection line returning the fluid from the flow path to the fluid supply source,
- wherein the supply line comprises a first supply line connected to the fluid supply source and a second supply line connected to the chuck,
- wherein the collection line comprises a first collection line connected to the fluid supply source and a second collection line connected to the chuck,
- wherein the first supply line and the first collection line are electrically conductive and grounded to remove static electricity during fluid flow, and
- wherein the second supply line and the second collection line are formed of an electrically insulating material to electrically isolate the chamber from the chuck.
11 more elements
Dependencies are inferred from the claim text.