Plasma processing apparatus

A plasma processing apparatus comprising:

• a plasma processing chamber;
• a substrate support disposed in the plasma processing chamber;
• a baffle structure disposed in the plasma processing chamber to surround the substrate support, the baffle structure including an upper baffle plate and a lower baffle plate, the upper baffle plate having a plurality of first openings, each of the plurality of first openings having a first width, the lower baffle plate having conductivity and coupled to a ground potential, the lower baffle plate having a plurality of second openings, each of the plurality of second openings having an upper opening portion and a lower opening portion, the upper opening portion having a second width greater than the first width, the lower opening portion having a third width smaller than the first width;
• and
• a liner structure disposed in the plasma processing chamber to surround a plasma processing space disposed above the substrate support, the liner structure including an inner cylindrical liner and an outer cylindrical liner, the inner cylindrical liner having a plurality of third openings, each of the plurality of third openings having a fourth width, the outer cylindrical liner having conductivity and coupled to a ground potential, the outer cylindrical liner having a plurality of fourth openings, each of the plurality of fourth openings having an inner opening portion and an outer opening portion, the inner opening portion having a fifth width greater than the fourth width, the outer opening portion having a sixth width smaller than the fourth width.