High-voltage device and method for increasing the dielectric strength in the high-voltage device
AssigneeSiemens Energy Global GmbH & Co. KG
InventorsThomas Heinz, Dietmar Frank, Armin Grund, Alexander Hartung, Martin Krehnke, Volker Lehmann
Life of this patent
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Abstract
A high-voltage device has an encapsulation housing and at least one bushing for at least one conductor, through which a current flows, into the encapsulation housing and/or out of the encapsulation housing. At least one electrode at free potential is surrounded by the bushing. The at least one electrode at free potential increases the dielectric strength in the high-voltage device, especially in the region of the bushing.
Claims18
A high-voltage device, comprising:
- an encapsulation housing;
- at least one bushing for guiding at least one live conductor into said encapsulation housing and/or out of said encapsulation housing;
- and
- at least one electrode at free potential enclosed by said at least one bushing;
- and
- said encapsulation housing having a flange and an insulator fastened in a mechanically stable manner on said flange, and said at least one electrode at free potential projects into said encapsulation housing.
A method for increasing a dielectric strength in a high-voltage device, the method comprising:
- providing the high-voltage device with
- an encapsulation housing having a flange and an insulator fastened in a mechanically stable manner on the flange, and
- at least one bushing for guiding at least one live conductor into the encapsulation housing and/or out of the encapsulation housing;
- providing at least one electrode at free potential inside the at least one bushing
- wherein the at least one electrode at free potential projects into the encapsulation housing, and wherein the at least one electrode is disposed to increase the dielectric strength relative to a bushing without an electrode at free potential.
Dependencies are inferred from the claim text.