Memory control device and refresh control method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsJunyoung Ko, Jungmin Bak, Changhwi Park
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Abstract
A memory control device includes a threshold generating circuit, which is configured to set a first threshold for a first memory module electrically coupled to the memory control device. This first threshold is based on information associated with the first memory module. An attack defense circuit is also provided, which is configured to count an input row address, and decide a row address whose count value exceeds the first threshold among row addresses of the first memory module as an aggressor row address.
Claims16
A memory device, comprising:
- a plurality of memory modules;
- and
- a memory controller electrically coupled to the plurality of memory modules and having refresh control circuit therein, which includes:
- a threshold generating circuit configured to determine a respective row hammer threshold (RHTH) for each of the plurality of memory modules by adjusting an initial row hammer threshold (I_RHTH) to account for at least one of an identification of a respective memory module of the plurality of memory modules, a performance of the respective memory module, and a reliability of the respective memory module;
- and
- an attack defense circuit configured to compare a respective row access count associated with each of a plurality of potential row hammer aggressor rows within the plurality of memory modules against the RHTH associated with the respective memory module to identify the presence of a victim row therein to be subject to a row refresh command for a corresponding victim row address (VRA) of the victim row,
- wherein the threshold generating circuit is configured to determine the RHTH for each of the plurality of memory modules by increasing the I_RHTH for at least some of the plurality of memory modules.
A refresh control method of a memory controller to which a plurality of memory modules are connected, comprising:
- determining a respective row hammer threshold (RHTH) for each of the plurality of memory modules by adjusting an initial row hammer threshold (I_RHTH) to account for at least one of an identification of a respective memory module of the plurality of memory modules, a performance of the respective memory module, and a reliability of the respective memory module;
- and
- comparing a respective row access count associated with each of a plurality of potential row hammer aggressor rows within the plurality of memory modules against the RHTH associated with the respective memory module to identify the presence of a victim row therein to be refreshed,
- wherein the RHTH for each of the plurality of memory modules is determined by increasing the I_RHTH for at least some of the plurality of memory modules.
A memory control device configured to be electrically coupled to a plurality of memory modules, comprising:
- a threshold generating circuit configured to determine a respective row hammer threshold (RHTH) for each of the plurality of memory modules by adjusting an initial row hammer threshold (I_RHTH) to account for at least one of an identification of a respective memory module of the plurality of memory modules, a performance of the respective memory module, and a reliability of the respective memory module;
- and
- an attack defense circuit configured to compare a respective row access count associated with each of a plurality of potential row hammer aggressor rows within the plurality of memory modules against the RHTH associated with the respective memory module to identify the presence of a victim row therein to be refreshed,
- wherein the identification of the respective memory module is selected from a group comprising a manufacturer of the respective memory module and a serial number of the respective memory module,
- wherein the performance of the respective memory module is associated with its read and/or write speed, and
- wherein the reliability of the respective memory module is associated with its usage period.
Dependencies are inferred from the claim text.