Apparatus to manipulate guided modes on a nanoscale using electro-optic effects
AssigneesAmr Helmy, Brian Cline
InventorsAmr Helmy, Brian Cline
Life of this patent
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Abstract
An optical apparatus and device for integrated opto-electronic platforms to manipulate and control guided modes using electro-optic effects in an electromagnetic waveguide. The electromagnetic waveguide comprises a first semiconductor layer, an electro-optical material layer, a metal layer adjacent to the electro-optical material layer, and a second semiconductor layer. The optical apparatus is configured to transfer light in the electro-optical material layer, the electromagnetic waveguide is configured to create coupled plasmonic modes in the electro-optical material layer, and the electro-optical material layer is configured to modulate the light based on a voltage applied across a thickness of the electro-optical material layer.
Claims20
An optical apparatus, comprising:
- an electromagnetic waveguide, comprising:
- a first set of layers, comprising:
- a first semiconductor layer;
- and
- an electro-optical material layer;
- a second set of layers, comprising:
- a metal layer adjacent to the electro-optical material layer;
- and
- a second semiconductor layer on a side of the metal layer opposite from the electro-optical material layer,
- wherein the first semiconductor layer is on a side of the electro-optical material layer opposite from the metal layer,
- wherein the electromagnetic waveguide is configured to create coupled plasmonic modes in the electro-optical material layer, wherein the electro-optical material layer exhibits an electro-optical effect through second-order nonlinearity, and
- wherein the electro-optical material layer is configured to modulate light in the coupled plasmonic modes based on a voltage applied across a thickness of the electro-optical material layer.
A transceiver device, comprising:
- an electro-optical coupled hybrid plasmonic waveguide (CHPW), comprising:
- an electro-optical material layer;
- a first semiconductor layer adjacent to a first surface of the electro-optical material layer;
- a metal layer adjacent to a second surface of the electro-optical material layer;
- and
- a second semiconductor layer adjacent to an opposite side of the metal layer than the electro-optical material layer, wherein the electro-optical material layer exhibits an electro-optical effect through second-order nonlinearity,
- wherein the electro-optical CHPW is configured to transfer light,
- wherein the electro-optical CHPW is configured to create coupled plasmonic modes in the electro-optical material layer, and
- wherein the electro-optical material layer is configured to modulate light in the coupled plasmonic modes based on a voltage applied across a thickness of the electro-optical material layer.
Dependencies are inferred from the claim text.