Substrate processing apparatus, raw material cartridge, substrate processing method, and raw material cartridge manufacturing method

A raw material cartridge installed on a substrate processing apparatus for manufacturing a semiconductor device and configured to supply a processing gas for processing the substrate, the raw material cartridge comprising:

• a raw material tank that accommodates a porous member containing a metal-organic framework adsorbed with gas molecules of a raw material of the processing gas, the metal-organic framework having a structure in which nanometer-sized pores are regularly and three-dimensionally arranged,
• wherein the raw material cartridge is configured to perform a desorption operation, thereby desorbing the gas molecules of the raw material of the processing gas adsorbed onto the metal-organic framework and supplying a raw material gas of a film, and
• the metal-organic framework is selected from the group consisting of metal-organic frameworks described in (a) to (c) below:
• (a) a metal-organic framework having a pore structure formed by accumulating a plurality of metal complexes each composed of a coordinate bond between an iron ion and 1,3,5-benzenetricarboxylic acid;
• (b) a metal-organic framework having a pore structure formed by accumulating a plurality of metal complexes each composed of a coordinate bond between a chromium ion and terephthalic acid;
• and
• (c) a metal-organic framework having a pore structure formed by accumulating a plurality of metal complexes each composed of a coordinate bond between a lanthanum ion and 1,3,5-tris(4-carboxyphenyl)benzene.

A substrate processing method comprising:

• installing a raw material cartridge including a raw material tank that accommodates a porous member containing a metal-organic framework in which gas molecules of a raw material of a processing gas for processing a substrate are adsorbed onto a container portion of a main body of a processing gas supply, the metal-organic framework having a structure in which nanometer-sized pores are regularly and three-dimensionally arranged, and the container portion being configured to allow the raw material cartridge to be installed thereon or removed therefrom;
• closing an opening of the container portion with a cover portion of the main body, the cover portion being connected to a flow path connected to a chamber of a substrate processing apparatus to communicate the raw material tank and the flow path with each other;
• desorbing the gas molecules of the raw material of the processing gas adsorbed onto the metal-organic framework in the processing gas supply, thereby obtaining the processing gas;
• and
• supplying the processing gas to a chamber in which the substrate is accommodated,
• wherein the raw material cartridge further includes a short pipe portion provided on an upper surface of the raw material tank and connected to the cover portion, and
• when the raw material cartridge is installed to the main body, the short pipe portion is connected to the flow path.

A method of manufacturing a raw material cartridge that is installed on a substrate processing apparatus for manufacturing a semiconductor device and is configured to supply a processing gas for processing the substrate, the method comprising:

• supplying gas molecules of a raw material of the processing gas to a metal-organic framework contained in a porous member accommodated in a raw material tank constituting the raw material cartridge, thereby adsorbing the gas molecules, the metal-organic framework having a structure in which nanometer-sized pores are regularly and three-dimensionally arranged,
• wherein the metal-organic framework is selected from the group consisting of metal-organic frameworks described in (a) to (c) below:
• (a) a metal-organic framework having a pore structure formed by accumulating a plurality of metal complexes each composed of a coordinate bond between an iron ion and 1,3,5-benzenetricarboxylic acid;
• (b) a metal-organic framework having a pore structure formed by accumulating a plurality of metal complexes each composed of a coordinate bond between a chromium ion and terephthalic acid;
• and
• (c) a metal-organic framework having a pore structure formed by accumulating a plurality of metal complexes each composed of a coordinate bond between a lanthanum ion and 1,3,5-tris(4-carboxyphenyl)benzene.