Method for cleaning semiconductor substrate, method for producing processed semiconductor substrate, and stripping composition

A processed semiconductor substrate production method comprising:

• producing a laminate having a semiconductor substrate, a support substrate, and an adhesive layer formed from an adhesive composition;
• processing the semiconductor substrate of the produced laminate;
• separating the semiconductor substrate and the adhesive layer from the support substrate;
• and
• removing the adhesive layer on the semiconductor substrate by use of a remover composition,
• wherein;
• the adhesive layer is a film formed by use of an adhesive composition that contains an adhesive component(S), and the adhesive component(S) comprises a siloxane adhesive containing a polyorganosiloxane component (A) that is curable through hydrosilylation;
• the remover composition contains a solvent but no salt;
• and
• the solvent includes an organic solvent represented by formula (L) in an amount of 80 mass % or more:
• where:
• L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group;
• and
• k represents the number of Ls and is an integer of 0 to 5.

A remover composition for use in removal of an adhesive layer provided on a semiconductor substrate during cleaning the semiconductor substrate, which composition contains a solvent but no salt, wherein:

• the adhesive layer is a film formed by use of an adhesive composition that contains an adhesive component(S), and the adhesive component(S) comprises a siloxane adhesive containing a polyorganosiloxane component (A) that is curable through hydrosilylation;
• the solvent includes an organic solvent represented by formula (L) in an amount of 80 mass % or more:
• where:
• L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group;
• and
• k represents the number of Ls and is an integer of 0 to 5.