Sensor array device and method therefor

A method for fabricating a sensor device, the method comprising:

• providing a partially completed semiconductor substrate comprising a silicon substrate, a buffer material overlying the silicon substrate, an n-type semiconductor material overlying the buffer material, an unintentionally doped (UID) optically absorptive semiconductor material overlying the n-type semiconductor material, and a UID optically transparent semiconductor material overlying the UID optically absorptive semiconductor material, and a native insulating material overlying the UID optically transparent semiconductor material;
• placing the partially completed semiconductor substrate into a first carrier device, the first carrier device being sealed and maintained in a predetermined environment, the predetermined environment including a nitrogen containing material;
• transferring the first carrier device, including the partially completed semiconductor substrate from a first geographic location to a second geographic location;
• transferring the partially completed semiconductor substrate from the first carrier device to a second carrier device;
• cleaning the partially completed semiconductor substrate;
• forming a dielectric material overlying a surface region of the partially completed semiconductor substrate;
• forming a p-type contact region overlying a first portion of the surface region to define a pattern in the dielectric material;
• forming a p-type semiconductor region using the pattern to introduce a p-type impurity into the UID optically transparent semiconductor material using either an implantation or diffusion process;
• forming a p-type metal contact region overlying the p-type contact region;
• etching a portion of the UID optically transparent semiconductor material, a 24 portion of the UID optically absorptive semiconductor material, and a portion of the n-type semiconductor material to define an n-type contact opening;
• and
• forming an n-type metal contact region within the etched portions to form a common n-type electrode.

A method for fabricating a sensor device, the method comprising:

• providing a partially completed semiconductor substrate comprising a silicon substrate, a buffer material overlying the silicon substrate, an n-type semiconductor material overlying the buffer material, a first unintentionally doped (UID) semiconductor material overlying the n-type semiconductor material, and a second UID semiconductor material overlying the first UID semiconductor material, and an insulating material overlying the second UID semiconductor material;
• placing the partially completed semiconductor substrate into a first carrier device, the first carrier device being sealed and maintained in a predetermined environment;
• transferring the first carrier device, including the partially completed semiconductor substrate from a first geographic location to a second geographic location;
• transferring the partially completed semiconductor substrate from the first carrier device to a second carrier device;
• cleaning the partially completed semiconductor substrate;
• forming a dielectric material overlying a surface region of the partially completed semiconductor substrate;
• forming a p-type contact region overlying a first portion of the surface region to define a pattern in the dielectric material;
• forming a p-type semiconductor region using the pattern to introduce a p-type impurity into the second UID semiconductor material using either an implantation or diffusion process;
• forming a p-type metal contact region overlying the p-type contact region;
• etching a portion of the second UID semiconductor material, a portion of the n-type semiconductor material, and a portion of the first UID semiconductor material to define an n-type contact opening;
• and
• forming an n-type metal contact region within the etched portions to form a common n-type electrode.