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US 12,527,031 B2Granted
Thin film transistor structure
AssigneeE Ink Holdings Inc.
InventorsMing-Kai Chuang, Lih-Hsiung Chan
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Abstract
A thin film transistor structure includes a gate electrode, a gate insulation layer, a first amorphous silicon layer, a source/drain electrode, and a second amorphous silicon layer. The gate insulation layer is located on the gate electrode. The first amorphous silicon layer is located on the gate insulation layer. The source/drain electrode is located on the first amorphous silicon layer. The second amorphous silicon layer is located in the gate insulation layer.
Claims16
A thin film transistor structure, comprising:
- a gate electrode;
- a gate insulation layer located on the gate electrode;
- a first amorphous silicon layer located on the gate insulation layer;
- a source/drain electrode located on the first amorphous silicon layer;
- and
- a second amorphous silicon layer located in the gate insulation layer.
3 more elements
A thin film transistor structure, comprising:
- a gate electrode;
- a gate insulation layer located on the gate electrode, wherein the gate insulation layer comprises a top portion and a bottom portion, and the bottom portion is located between the top portion and the gate electrode;
- a first amorphous silicon layer located on the gate insulation layer;
- a source electrode located on the first amorphous silicon layer;
- a drain electrode located on the first amorphous silicon layer, and the source electrode and the drain electrode are arranged in a first direction;
- and
- a second amorphous silicon layer located between the top portion and the bottom portion of the gate insulation layer.
4 more elements
Dependencies are inferred from the claim text.