US 12,527,010 B2 · Method for forming semiconductor structure, laminate structure, and method for forming laminate structure

Abstract

A method for forming a semiconductor structure and a method for forming a laminate structure include the following operations. A laminate structure is provided, the laminate structure including a plurality of sacrificial layers and a plurality of support layers alternately stacked on one another, each support layers includes a plurality of doped areas and a plurality of body areas. A first etching process is performed to form a plurality of first gaps penetrating through the plurality of body areas and the plurality of sacrificial layers in the laminate structure. A first material layer is deposited on inner walls of the plurality of first gaps. A second etching process is performed to remove the plurality of doped areas and the plurality of sacrificial layers to form a second gap between any two adjacent first gaps.

Claims18

Dependent claims

A method for forming a semiconductor structure, comprising:

providing a laminate structure, wherein the laminate structure comprises a plurality of sacrificial layers and a plurality of support layers alternately stacked on one another, each of the plurality of support layers comprises a plurality of doped areas and a plurality of body areas, and a hardness of each of the plurality of doped areas is lower than a hardness of each of the plurality of body areas;
performing a first etching process to form a plurality of first gaps penetrating through the plurality of body areas and the plurality of sacrificial layers in the laminate structure;
depositing a first material layer on inner walls of the plurality of first gaps;
and
performing a second etching process to remove the plurality of doped areas and the plurality of sacrificial layers to form a second gap between any two adjacent first gaps of the plurality of first gaps.

2 more elements

A method for forming a laminate structure, the laminate structure being arranged on a surface of a base, the method comprising:

alternately forming a plurality of sacrificial layers and a plurality of initial support layers on the surface of the base;
and
performing ion implantation on a portion of each of the plurality of initial support layers to form a plurality of support layers each comprising a plurality of doped areas and a plurality of body areas,
wherein a hardness of each of the plurality of doped areas is lower than a hardness of each of the plurality of body areas.

1 more element

Dependencies are inferred from the claim text.

Method for forming semiconductor structure, laminate structure, and method for forming laminate structure

Life of this patent

Method for forming semiconductor structure, laminate structure, and method for forming laminate structure

Life of this patent

Abstract

Claims18