Storage device

A storage device, comprising:

• a printed circuit board;
• a first memory device;
• a second memory device;
• a storage controller configured to control the first memory device and the second memory device;
• an active interposer which couples the storage controller, the first memory device, the second memory device, and the printed circuit board;
• a first sensor which is closer to the first memory device than the second memory device, and mounted inside the active interposer;
• a second sensor which is closer to the second memory device than the first memory device, and mounted inside the active interposer;
• and
• a strain gauge which is placed inside the active interposer and configured to measure a physical strain and to provide the storage controller with a strain signal of the physical strain,
• wherein the first sensor and the second sensor include at least one of a thermal sensor, a voltage sensor, a current sensor, a humidity sensor, a mechanical impact sensor, and an acceleration sensor,
• wherein the storage controller is further configured to control an operation of the first memory device, in response to a first sensor signal provided from the first sensor, and
• wherein the storage controller is further configured to control an operation of the second memory device, in response to a second sensor signal provided from the second sensor, and
• wherein the storage controller is further configured to switch a mode of the first memory device and the second memory device between a plurality of operating modes, based on the first sensor signal, the second sensor signal, and the strain signal.

A storage device, comprising:

• a package substrate;
• a first semiconductor chip coupled to the package substrate;
• a second semiconductor chip coupled to the package substrate;
• a third semiconductor chip coupled to the package substrate;
• an active interposer which couples the first semiconductor chip, the second semiconductor chip, and the third semiconductor chip with the package substrate using a through-silicon via;
• a sensor which is mounted inside the active interposer as a chiplet structure and configured to sense an impact;
• and
• a strain gauge which is mounted inside the active interposer and configured to measure a physical strain based on a deformation of an electric resistance of the strain gauge,
• wherein the sensor is further configured to provide a sensor signal of the sensed impact to the third semiconductor chip,
• wherein the strain gauge is further configured to provide a strain signal of the measured physical strain to the third semiconductor chip, and
• wherein the third semiconductor chip is further configured to control operation of the first semiconductor chip, the second semiconductor chip, and the third semiconductor chip, in response to the sensor signal and the strain signal.