US 12,525,941 B2 · Preparation method for surface acoustic wave device

Abstract

Disclosed are methods of preparing a Surface Acoustic Wave (SAW) device, comprising: sequentially depositing a Cu electrode, a silicon oxide film, modifying the surface of the silicon oxide film, and then depositing a piezoelectric film, and an Al electrode on a substrate having an interdigital (IDT) electrode pattern to obtain the SAW device. In some embodiments, the Cu and Al electrodes both have IDT electrode patterns corresponding to the IDT pattern of the substrate. Because the Sezawa wave mode that is adopted is formed by coupling film thickness vibration and transverse vibration, the present invention is characterized in that a longitudinal electric field and a transverse electric field are excited through the double-layer electrodes whereby the electromechanical coupling coefficient of the SAW device can be improved by changing the coupling pattern between the electric fields and the piezoelectric film.

Claims19

Dependent claims

A surface acoustic wave (SAW) device, comprising:

a copper (Cu) electrode comprising a ground terminal and a signal terminal;
a piezoelectric film;
and
an aluminum (Al) electrode comprising a ground terminal and a signal terminal are arranged, in sequence, on a substrate comprising an interdigital (IDT) electrode pattern,
wherein the signal terminal of the Cu electrode is arranged opposite the ground terminal of the Al electrode,
wherein the ground terminal of the Cu electrode is arranged opposite the signal terminal of the Al electrode, and
wherein the Cu electrode and the Al electrode both comprise first and second IDT electrode patterns, respectively, in accordance with the IDT electrode pattern on the substrate.

4 more elements

Dependencies are inferred from the claim text.

Preparation method for surface acoustic wave device

Life of this patent

Preparation method for surface acoustic wave device

Life of this patent

Abstract

Claims19