Thin film transistor and display panel using the same
AssigneeLG Display Co., Ltd.
InventorsKum Mi Oh, Hyun Jin Kim, Seung Hyo Ko, Sun Wook Ko
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Abstract
A display panel according to one embodiment of the present disclosure includes a substrate, an active electrode over the substrate and including a source region, a drain region, and a channel region, and an active upper electrode of a curved shape over the active electrode. The channel region of the active electrode and the active upper electrode may overlap each other and the channel region may have a same shape as the active upper electrode. Accordingly, a driving element included in the display panel may generate a high driving current and the degree of integration in a pixel may be improved.
Claims23
A display panel comprising:
- a substrate;
- an active layer over the substrate and including a source region, a drain region, and a channel region;
- an active upper electrode of a curved shape over the active layer;
- a drain electrode contacting the drain region;
- and
- a source electrode contacting the source region;
- and
- an LED element coupled to the source electrode or the drain electrode, the LED element including an inorganic material as a light emitting layer,
- wherein the channel region of the active layer and the active upper electrode overlap each other and the channel region has a same shape as the active upper electrode,
- wherein a thin film transistor including the active layer, the active upper electrode of the curved shape, and the source electrode is provided over the substrate, and the active upper electrode of the curved shape is a gate electrode of the thin film transistor, and
- wherein only one of the drain electrode and the source electrode is coupled to the LED element including the inorganic material and overlaps the active upper electrode of the curved shape.
A display panel comprising:
- a substrate;
- an active layer over the substrate and including a source region, a drain region, and a channel region;
- an active upper electrode of a curved shape over the active layer;
- and
- a high potential power line providing a high potential voltage,
- wherein a thin film transistor including the active layer and the active upper electrode of the curved shape is provided over the substrate, and the active upper electrode of the curved shape is a source electrode of the thin film transistor, and
- wherein the high potential power line is branched to overlapping and being in contact with the source electrode of the curved shape.
A thin film transistor comprising:
- an active layer including a source region, a drain region, and a channel region;
- an active upper electrode over the active layer, overlapping the active layer, and implemented in a curved shape in a plan;
- a drain electrode contacting the drain region;
- a source electrode contacting the source region;
- and
- an active lower electrode under the active layer and overlapping the active layer,
- wherein the active upper electrode of the curved shape serves as a gate electrode, and
- wherein the source electrode and the drain electrode do not have a curved shape and are spaced apart from the active upper electrode of the curved shape.
A display device comprising:
- a display panel;
- a high potential power line providing a high potential voltage;
- and
- a thin film transistor coupled to the display panel, the thin film transistor including:
- an active layer including a source region, a drain region, and a channel region;
- an active upper electrode over the active layer, overlapping the active layer, and implemented in a curved shape;
- and
- an active lower electrode under the active layer and overlapping the active layer,
- wherein the active upper electrode of the curved shape serves as a source electrode, and
- wherein the high potential power line is branched to overlapping and being in contact with the active upper electrode of the curved shape.
Dependencies are inferred from the claim text.