Semiconductor device and method of forming clip bond having multiple bond line thicknesses

A semiconductor device, comprising:

• a leadframe;
• a first electrical component disposed over the leadframe;
• and
• a clip bond disposed over the first electrical component, wherein a first thickness of the clip bond in a range of 0.002-0.022 mm proximate to directly above a first distal end of the first electrical component is less than a second thickness of the clip bond in a range of 0.047-0.067 mm proximate to directly above a second distal end of the first electrical component opposite the first distal end of the first electrical component.

A method of making a semiconductor device, comprising:

• providing a leadframe;
• disposing a first electrical component over the leadframe;
• and
• disposing a clip bond over the first electrical component by forming a first recess proximate to a first distal end of the first electrical component, and forming a second recess proximate to a second distal end of the first electrical component opposite the first distal end of the first electrical component, wherein a depth of the first recess in a range of 0.215-0.235 mm measured vertically from a top surface of the first electrical component to a first bottom surface of the clip bond directly above the first distal end of the first electrical component is greater than a depth of the second recess in a range of 0.170-0.190 mm measured vertically from the top surface of the first electrical component to a second bottom surface of the clip bond directly above the second distal end of the first electrical component.