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US 12,525,557 B2Granted
Die-beam alignment for laser-assisted bonding
AssigneeSTATS ChipPAC Pte. Ltd.
InventorsWagno Alves Braganca, Jr., KyungOe Kim, TaeKeun Lee
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Abstract
A method of making a semiconductor device involves the steps of disposing a first semiconductor die over a substrate and disposing a beam homogenizer over the first semiconductor die. A beam from the beam homogenizer impacts the first semiconductor die. The method further includes the steps of determining a positional offset of the beam relative to the first semiconductor die in a number of pixels, using a first calibration equation to convert the number of pixels into a distance in millimeters, and moving the beam homogenizer the distance in millimeters to align the beam and first semiconductor die.
Claims14
A method of making a semiconductor device, comprising:
- disposing a first semiconductor die over a substrate;
- disposing a beam homogenizer over the first semiconductor die in a first position, wherein a beam from the beam homogenizer impacts the first semiconductor die;
- generating a first calibration equation by,
- capturing a first image of the first semiconductor die and beam using a camera with the beam homogenizer in the first position over the first semiconductor die,
- calculating a first positional offset of the beam relative to the first semiconductor die in a first number of pixels by using image processing on the first image,
- moving the beam homogenizer a first known distance to a second position over the first semiconductor die,
- capturing a second image of the first semiconductor die and beam using the camera with the beam homogenizer in the second position over the first semiconductor die,
- calculating a second positional offset of the beam relative to the first semiconductor die in a second number of pixels by using image processing on the second image, and
- performing a first linear regression with the first known distance, first number of pixels, and second number of pixels;
- returning the beam homogenizer to the first position over the first semiconductor die after generating the first calibration equation;
- generating a second calibration equation by,
- capturing a third image of the first semiconductor die and beam using the camera with the beam homogenizer in the first position over the first semiconductor die,
- calculating a first rotational offset of the beam relative to the first semiconductor die as a first angle value by using image processing on the third image,
- rotating the beam homogenizer a second known distance to a third position over the first semiconductor die,
- capturing a fourth image of the first semiconductor die and beam using the camera with the beam homogenizer in the third position over the first semiconductor die,
- calculating a second rotational offset of the beam relative to the first semiconductor die as a second angle value by using image processing on the fourth image, and
- performing a second linear regression with the second known distance, first angle value, and second angle value;
- returning the beam homogenizer to the first position over the first semiconductor die after generating the second calibration equation;
- calculating a third positional offset of the beam relative to the first semiconductor die in a first unit;
- using the first calibration equation to convert the third positional offset into a first distance in a second unit;
- moving the beam homogenizer the first distance to center the first semiconductor die fully within the beam;
- calculating a third rotational offset of the beam relative to the first semiconductor die in a third unit;
- using the second calibration equation to convert the third rotational offset into a second distance in a fourth unit;
- rotating the beam homogenizer the second distance to rotationally align the beam to the first semiconductor die;
- disposing the beam homogenizer over a second semiconductor die;
- calculating a fourth positional offset of the beam relative to the second semiconductor die in the first unit;
- using the first calibration equation to convert the fourth positional offset into a third distance in the second unit;
- moving the beam homogenizer the third distance to center the second semiconductor die fully within the beam;
- calculating a fourth rotational offset of the beam relative to the second semiconductor die in the third unit;
- using the second calibration equation to convert the fourth rotational offset into a fourth distance in the fourth unit;
- and
- rotating the beam homogenizer the fourth distance to rotationally align the beam to the second semiconductor die.
29 more elements
A method of making a semiconductor device, comprising:
- disposing a first semiconductor die over a substrate;
- disposing a beam homogenizer over the first semiconductor die in a first position using a first camera, wherein a beam from the beam homogenizer impacts the first semiconductor die;
- generating a second calibration equation by,
- capturing a third image of the first semiconductor die and beam using a second camera with the beam homogenizer in the first position over the first semiconductor die, wherein the second camera is a different type of camera from the first camera,
- calculating a first rotational offset of the beam relative to the first semiconductor die as a first angle value by using image processing on the third image,
- rotating the beam homogenizer a second known distance to a third position over the first semiconductor die,
- capturing a fourth image of the first semiconductor die and beam using the second camera with the beam homogenizer in the third position over the first semiconductor die,
- calculating a second rotational offset of the beam relative to the first semiconductor die as a second angle value by using image processing on the fourth image, and
- performing a second linear regression with the second known distance, first angle value, and second angle value;
- returning the beam homogenizer to the first position over the first semiconductor die after generating the second calibration equation;
- calculating a third rotational offset of the beam relative to the first semiconductor die in a third unit using image processing on an image from a second camera;
- using the second calibration equation to convert the third rotational offset into a second distance in a fourth unit;
- rotating the beam homogenizer the second distance to rotationally align the beam to the first semiconductor die;
- disposing the beam homogenizer over a second semiconductor die;
- calculating a fourth rotational offset of the beam relative to the second semiconductor die in the third unit;
- using the second calibration equation to convert the fourth rotational offset into a fourth distance in the fourth unit;
- and
- rotating the beam homogenizer the fourth distance to rotationally align the beam to the second semiconductor die.
15 more elements
A method of making a semiconductor device, comprising:
- disposing a beam homogenizer over a semiconductor die in a first position with a beam from the beam homogenizer disposed onto the semiconductor die and with an entire footprint of the semiconductor die within the beam of light;
- generating a second calibration equation by,
- capturing a third image of the first semiconductor die and beam using a camera with the beam homogenizer in the first position over the first semiconductor die,
- calculating a first rotational offset of the beam relative to the first semiconductor die as a first angle value by using image processing on the third image,
- rotating the beam homogenizer a second known distance to a third position over the first semiconductor die,
- capturing a fourth image of the first semiconductor die and beam using the camera with the beam homogenizer in the third position over the first semiconductor die,
- calculating a second rotational offset of the beam relative to the first semiconductor die as a second angle value by using image processing on the fourth image, and
- performing a second linear regression with the second known distance, first angle value, and second angle value;
- returning the beam homogenizer to the first position over the first semiconductor die after generating the second calibration equation;
- calculating a third rotational offset of the beam homogenizer relative to the semiconductor die in a third unit while the beam homogenizer is disposed over the semiconductor die with the beam impacting the semiconductor die;
- using the second calibration equation to convert the third rotational offset into a second distance in a fourth unit;
- and
- rotating the beam homogenizer the second distance to rotationally align the beam to the semiconductor die.
10 more elements
Dependencies are inferred from the claim text.