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US 12,525,555 B2Granted
Method for fabricating a semiconductor device using wet etching and dry etching and semiconductor device
AssigneeInfineon Technologies Austria AG
InventorsSaurabh Roy, Matteo Dainese, Michael Ehmann, Hiroshi Narahashi, Johanna Schlaminger, Katharina Teichmann, Sigrid Wabnig
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Abstract
A semiconductor device includes a semiconductor substrate, a TiW layer arranged on the semiconductor substrate a Ti layer arranged on the TiW layer, a Ni alloy layer arranged on the Ti layer, and an Ag layer arranged on the Ni alloy layer, wherein the Ag layer and the Ni alloy layer comprise side faces fabricated by at least one wet etching process, and wherein the Ti layer and the TiW layer comprise side faces fabricated by a dry etching process.
Claims6
A semiconductor device, comprising:
- a semiconductor substrate,
- a TiW layer arranged on the semiconductor substrate,
- a Ti layer arranged on the TiW layer,
- a Ni alloy layer arranged on the Ti layer, and
- an Ag layer arranged on the Ni alloy layer,
- wherein the Ag layer and the Ni alloy layer comprise side faces fabricated by at least one wet etching process,
- wherein the Ti layer and the TiW layer comprise side faces fabricated by a dry etching process,
- wherein the Ag layer, the Ni alloy layer, the Ti layer and the TiW layer form a layer stack, and
- wherein as viewed from above the Ag layer, the Ti layer and the TiW layer of the layer stack have a greater lateral extension than the Ag layer and the Ni alloy layer of the layer stack, such that the layer stack is free of any undercuts between different layers of the layer stack.
6 more elements
Dependencies are inferred from the claim text.