Semiconductor device

A semiconductor device, comprising:

• a first semiconductor chip and a second semiconductor chip;
• a bonding member;
• and
• a planar laminated substrate having a front surface and a rear surface opposite to each other, the laminated substrate having the first semiconductor chip and the second semiconductor chip bonded to the front surface thereof via the bonding member, wherein
• the laminated substrate includes:
• a planar ceramic board having a first main surface and a second main surface opposite to each other, and containing a plurality of ceramic particles;
• a first metal layer that contains copper and is bonded to the first main surface;
• a second metal layer that contains copper and is bonded to the second main surface;
• and
• an intermediate layer including a first oxide containing at least either magnesium or manganese,
• the first metal layer includes:
• a positive electrode metal layer to which a positive terminal is connected;
• a chip metal layer to which the first semiconductor chip is bonded;
• an output metal layer to which the second semiconductor chip is bonded and to which an output terminal is connected;
• and
• a negative electrode metal layer to which a negative terminal is connected, and
• the intermediate layer overlaps regions of the second main surface that respectively face the positive electrode metal layer and the chip metal layer, and overlaps a region of the first main surface that faces the negative electrode metal layer in a plan view of the semiconductor device.

A semiconductor device, comprising:

• a semiconductor chip;
• a bonding member;
• and
• a planar laminated substrate having a front surface and a rear surface opposite to each other, the laminated substrate including the semiconductor chip bonded to the front surface thereof via the bonding member, wherein
• the laminated substrate includes:
• a ceramic board containing ceramic particles, a first oxide including magnesium, and a second oxide including silicon, wherein the ceramic board contains the first oxide in a range of 10 wt % to 50 wt % in terms of a content of the second oxide;
• and
• a metal layer bonded to a main surface of the ceramic board.

A semiconductor device, comprising:

• a semiconductor chip;
• a bonding member;
• and
• a planar laminated substrate having a front surface and a rear surface opposite to each other, the laminated substrate including the semiconductor chip bonded to the front surface thereof via the bonding member, wherein the laminated substrate includes:
• a ceramic board containing ceramic particles;
• a metal layer bonded to a main surface of the ceramic board;
• and
• an intermediate layer disposed between the main surface of the ceramic board and the metal layer, and includes a first oxide containing manganese.