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US 12,525,499 B2Granted
Method of manufacturing semiconductor chips having a side wall sealing
AssigneeInfineon Technologies Austria AG
InventorsChristian Fachmann, Ingo Muri
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Abstract
A method of manufacturing semiconductor chips having a side wall sealing is described. The method includes forming dicing trenches in a semiconductor wafer. The side walls of the dicing trenches are anodized to generate an anodic oxide layer at the side walls of the dicing trenches. Semiconductor chips are separated from the semiconductor wafer.
Claims11
A method of manufacturing semiconductor chips having a side wall sealing, the method comprising:
- forming dicing trenches in a semiconductor wafer;
- anodizing side walls of the dicing trenches to generate an anodic oxide layer at the side walls of the dicing trenches, wherein a temperature of an electrolyte during the anodizing is equal to or higher than 70° C.;
- and
- separating the semiconductor chips from the semiconductor wafer.
1 more element
Dependencies are inferred from the claim text.