Mixed dielectric materials for improving signal integrity of integrated electronics packages

A semiconductor package, comprising:

• a substrate comprising one or more layers each containing a plurality of gas-filled regions;
• at least one first line disposed on a surface of, within, or through the substrate, the at least one first line being configured as a conductive signal path for at least one first signal;
• at least one second line disposed on a surface of, within, or through the substrate, the at least one second line being configured as a conductive signal path for at least one second signal;
• at least one third line disposed between the at least one first line and the at least one second line, the at least one third line comprising a first dielectric material that is configured as a shield between the at least one first line and the at least one second line, the first dielectric material having a dielectric constant that is higher than a dielectric constant of the one or more materials of the substrate;
• at least one fourth line disposed within or through the substrate, the at least one fourth line being configured as a conductive signal path or as a conductive via for at least one third signal;
• a first region disposed within or through the substrate and surrounding the at least one fourth line, the first region comprising a conductive material and being configured to serve as a grounding shield, the first region having a cross-sectional shape comprising one of an annulus, an elliptical annulus, a square annulus, a rectangular annulus, or other polygonal annulus;
• and
• a second region disposed within or through the substrate and disposed between the at least one fourth line and the first region, the second region comprising a second dielectric material having one of a dielectric constant that is the same as a dielectric constant of the one or more materials of the substrate, a dielectric constant that is less than the dielectric constant of the one or more materials of the substrate, or a dielectric constant that is greater than the dielectric constant of the one or more materials of the substrate.

A substrate for a semiconductor device, comprising:

• a first layer, the first layer comprising a first material;
• a second layer, the second layer comprising a second material;
• a third layer disposed between the first and second layers, the third layer comprising a third material that is different from the first and second materials, the first, second, and third layers each containing a plurality of gas-filled regions;
• at least one fifth line disposed on one of the first or second layers, the at least one fifth line being configured as a conductive signal path for at least one fourth signal;
• at least one sixth line disposed on the one of the first or second layers, the at least one sixth line being configured as a conductive signal path for at least one fifth signal that is different from the at least one fourth signal;
• and
• at least one seventh line disposed between the at least one fifth line and the at least one sixth line on the one of the first or second layers, the at least one seventh line comprising a sixth material that is configured as a shield between the at least one fifth line and the at least one sixth line, the sixth material having a dielectric constant that is higher than a dielectric constant of the first material and the second material.