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US 12,525,461 B2Granted
Hard mask liftoff processes
AssigneeGoogle Inc.
InventorsBrian James Burkett, John Mark Kreikebaum
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Abstract
A substrate, a first layer disposed on the substrate, and a second layer disposed on the first layer are provided. An opening is etched through the second layer to the first layer. A first portion of the first layer is etched through the opening using a first etchant, to expose a surface of the substrate through the opening. A feature is deposited on the surface of the substrate through the opening. A second portion of the first layer is etched using a gaseous etchant, to release the substrate from the second layer.
Claims21
A fabrication method, comprising:
- providing a substrate, a first layer disposed on the substrate, and a second layer disposed on the first layer;
- etching an opening through the second layer to the first layer;
- etching a first portion of the first layer through the opening using a gaseous etchant, to expose a surface of the substrate through the opening;
- depositing a feature on the surface of the substrate through the opening;
- and
- etching a second portion of the first layer using the gaseous etchant, to release the substrate from the second layer,
- wherein etching the second portion of the first layer using the gaseous etchant comprises etching the second portion using at least one of a higher etch chamber pressure, a higher concentration of active gaseous etching agent, or a higher etching temperature than is used to etch the first portion of the first layer using the gaseous etchant.
4 more elements
Dependencies are inferred from the claim text.