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US 12,525,457 B2Granted
Surface processing of semiconductor workpieces
AssigneeWolfspeed, Inc.
InventorsNolan David Germano, Emma Elizabeth Stone
Life of this patent
Estimating the term…
Abstract
An example method includes obtaining data indicative of a workpiece processing parameter. In some implementations, the example method includes determining a grinding depth for a semiconductor workpiece based at least in part on the data indicative of the workpiece processing parameter. In some implementations, the example method includes performing a grinding operation to remove material from the semiconductor workpiece to reduce a thickness of the semiconductor workpiece by the grinding depth.
Claims10
A method, comprising:
- obtaining data indicative of a workpiece removal parameter, the workpiece removal parameter indicative of processing information used to separate semiconductor workpieces from a boule;
- performing a grinding operation to remove material from a first semiconductor workpiece removed from the boule to reduce a thickness of the first semiconductor workpiece by a first grind depth;
- obtaining an image of the first semiconductor workpiece after the grinding operation;
- and
- determining, based on the image and the data indicative of the workpiece removal parameter, second grind depth for a second semiconductor workpiece, the second semiconductor workpiece removed from the boule after the first semiconductor workpiece;
- wherein the second grind depth is different than the first grind depth.
3 more elements
A system for grinding semiconductor workpieces, the system comprising:
- a grinding surface operable to remove semiconductor material from a surface of a semiconductor workpiece;
- a translation stage operable to impart relative motion between the grinding surface and the semiconductor workpiece;
- an image-capturing device;
- and
- control circuitry configured to perform operations, the operations comprising:
- determining a first grinding depth for a first semiconductor workpiece based at least in part on the data indicative of a workpiece removal parameter, the workpiece removal parameter indicative of processing information used to separate semiconductor workpieces from a boule;
- controlling the grinding surface to remove the semiconductor material from the first semiconductor workpiece to reduce a thickness of the first semiconductor workpiece by the first grinding depth;
- obtaining an image of the first semiconductor workpiece after the grinding operation;
- and
- determining, based on the image and the data indicative of the workpiece removal parameter, a second grinding depth for a second semiconductor workpiece, the second semiconductor workpiece removed from the boule after the first semiconductor workpiece;
- wherein the second grinding depth is different than the first grinding depth.
8 more elements
Dependencies are inferred from the claim text.