Charged particle beam device

A charged particle beam apparatus comprising:

• a sample chamber;
• a lens barrel having an electron gun capable of performing irradiation with an electron beam and attached to the sample chamber;
• a stage allowing a sample to be installed when the sample is analyzed and provided in the sample chamber;
• a detector provided in the sample chamber and capable of detecting a secondary or backscattered electron emitted from the sample as a signal in a case where the sample installed on the stage is irradiated with the electron beam when the sample is analyzed;
• a vacuum pump for adjusting an internal pressure of the sample chamber;
• a control unit having an image processing control circuit capable of converting the signal detected by the detector into a captured image and controlling an operation of each of the electron gun, the stage, the detector, and the vacuum pump;
• a region setter for setting an irradiation region for irradiating the sample with the electron beam and an irradiation prohibited region for prohibiting the irradiation of the sample with the electron beam;
• and
• a captured image acquirer for selectively irradiating the irradiation region with the electron beam and acquiring a high-vacuum SEM image of the irradiation region based on a secondary or backscattered electron emitted from the irradiation region, wherein
• the control unit further has a storage medium,
• the irradiation region includes a plurality of photographing fields of view,
• a position of the irradiation prohibited region and a position of each of the plurality of photographing fields of view are stored in the storage medium as coordinates of the stage,
• a region setting is performed using an optical image or a low-vacuum SEM image of the sample captured under a first pressure, and
• a captured image acquisition is performed with an inside of the sample chamber at a second pressure lower than the first pressure, and
• wherein the captured image acquirer is configured for:
• (a) moving the stage based on the coordinates of the stage stored in the storage medium such that an unphotographed field of view among the plurality of photographing fields of view is positioned at an irradiation position of the electron beam;
• (b) selectively irradiating the unphotographed field of view with the electron beam and acquiring a captured image of the unphotographed field of view based on a secondary or backscattered electron emitted from the unphotographed field of view;
• (c) repeating the limitation (a) and the limitation (b) a plurality of times;
• and
• (d) creating the high-vacuum SEM image of the irradiation region by splicing captured images of the plurality of photographing fields of view acquired in the limitation (b) performed the plurality of times.