Embedded inductance structure and manufacturing method thereof

A method for manufacturing an embedded inductance structure, the method comprising:

• (a) preparing a temporary bearing plate;
• (b) preparing a first conductive coil layer and a first conductive copper column layer on the first conductive coil layer on at least one side of the temporary bearing plate, wherein the first conductive coil layer comprises a first conducting circuit and at least one first conductive coil, and the first conductive copper column layer comprises at least two first conductive copper columns respectively in contact with the first conducting circuit and the first conductive coil;
• (c) forming a first insulating layer on the first conductive coil layer and the first conductive copper column layer, and thinning the first insulating layer to expose an end portion of the first conductive copper column layer;
• (d) forming an inductance coil by repeating steps (b) and (c) to form an N-layer conductive coil layer, an N−1 layer conductive copper column layer, and an N-layer insulating layer, wherein N≥3;
• (e) removing the temporary bearing plate;
• (f) forming an inductance cavity body in the N-layer conductive coil layer, wherein the inductance coil exposed on an inner wall of the inductance cavity body;
• (g) filling a magnet in direct contact with the inductance coil in the inductance cavity body to form an inductance, and thinning the magnet such that an end portion of the magnet is flush with the inductance coil;
• (h) respectively preparing an Nth conductive copper column layer and an (N+1)th conductive copper column layer on an upper surface and lower surface of the N-layer insulating layer, wherein the Nth conductive copper column layer is respectively in contact with the inductance coil and the Nth conducting circuit, and the (N+1)th conductive copper column layer is respectively in contact with the inductance coil and the first conducting circuit;
• (i) forming an (N+1)th insulating layer and an (N+2)th insulating layer on the Nth conductive copper column layer and the (N+1)th conductive copper column layer respectively, and thinning the (N+1)th insulating layer and the (N+2)th insulating layer so as to expose end portions of the Nth conductive copper column layer and the (N+1)th conductive copper column layer respectively;
• (j) fabricating an (N+1)th conducting circuit and an (N+2)th conducting circuit on the (N+1)th insulating layer and the (N+2)th insulating layer respectively, wherein the (N+1)th conducting circuit is conductively connected to the Nth conducting circuit via the Nth conductive copper column layer, and the (N+2)th conducting circuit is conductively connected to the first conducting circuit via the (N+1)th;
• conductive copper column layer;
• and
• (k) respectively forming a first solder mask and a second solder mask on the (N+1)th conducting circuit and the (N+2)th conducting circuit, and respectively forming a first surface treatment layer and a second surface treatment layer in the first solder mask and the second solder mask.