Storage apparatus, liquid discharge head, and liquid discharge apparatus

A storage apparatus comprising:

• a memory unit including an anti-fuse element, a resistance element connected in parallel to the anti-fuse element, and a switch element connected in series with the anti-fuse element, wherein if the switch element is in a conductive state a current is supplied to the anti-fuse element and if the switch element is in a non-conductive state the current is not supplied to the anti-fuse element;
• a current detection unit for detecting a current value supplied to the memory unit;
• and
• an information writer that writes information into the anti-fuse element by applying a cyclical signal to the switch element to change the state of the switch element between the conductive state and the non-conductive state,
• wherein the anti-fuse element comprises a metal oxide semiconductor (MOS) structure,
• wherein the current value detected by the current detection unit indicates a dielectric breakdown state of the MOS structure of the anti-fuse element,
• wherein the information writer applies a first signal of having a first cycle to the switch element before a current value supplied to the memory unit reaches a first reference value, and applies a second signal having a second cycle larger than the first cycle to the switch element after the current value supplied to the memory unit reaches the first reference value, and
• wherein the first reference value corresponds to a change in the MOS structure from a state before dielectric breakdown to a soft dielectric breakdown state.