Treating arrangement with storage chamber and epitaxial reactor

Treating arrangement for an epitaxial reactor of the type for epitaxial deposition at high temperature of layers of semiconductor material on substrates of semiconductor material for the production of electrical components, comprising:

• a reaction chamber for treating substrates,
• a transfer chamber adjacent to the reaction chamber, for transferring substrates placed over substrates support devices,
• a loading/unloading group at least in part adjacent to the transfer chamber, arranged to contain a substrates support device with one or more substrates,
• a storage chamber at least in part adjacent to the loading/unloading group, having a first storage zone for treated and/or untreated substrates and a second storage zone for substrates support devices without any substrate,
• at least one external robot for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber and said loading/unloading group,
• at least one internal robot for transferring substrates support devices with one or more substrates between said loading/unloading group and said reaction chamber via said transfer chamber;
• and
• a control unit configured to control the at least one external robot or the at least one internal robot to interface with a tool for transferring the substrates support device from one position to another, wherein the tool includes an upper surface adapted to contact the substrates support device and a lower surface adapted to contact the at least one external robot or the at least one internal robot;
• wherein said external robot comprises an articulated arm arranged to handle both treated substrates and untreated substrates as well as substrates support devices.