Semiconductor device manufacturing system and method for manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising:

• providing the wafer in a processing chamber;
• rotating the wafer about an axis extending through a center of the wafer;
• supplying a gas to a central area of an upper surface of the wafer;
• supplying a processing solution to a central area of a lower surface of the wafer;
• discharging the gas out of the processing chamber through an exhaust of the processing chamber;
• collecting a first pressure data related to the gas supplied to the central area of the upper surface of the wafer by a first pressure sensor;
• collecting a second pressure data related to the gas passing through the exhaust of the processing chamber by a second pressure sensor;
• analyzing the first pressure data and the second pressure data to determine whether the gas supplied to the central area of the upper surface of the wafer is insufficient or excessive to judge whether the gas is in a balance condition;
• and
• dynamically adjusting a flow of the gas supplied to the central area of the upper surface of the substrate and/or an open ratio of the exhaust of the processing chamber based on determination to maintain the balance condition;
• wherein the method is configured to clean the wafer provided and rotated in the processing chamber.

A semiconductor device manufacturing system for cleaning a wafer, comprising:

• a processing chamber has a spin base configured to hold the wafer and rotate the wafer about an axis passing through a center of the wafer and a processing portion configured to supply a processing solution to a lower surface of the wafer;
• a first gas supply device in fluid communication with the processing chamber and configured to discharge a gas toward an upper surface of the wafer when the wafer is rotated, wherein the first gas supply device has a first pressure sensor configured to detect a pressure of the gas supplied into the processing chamber and discharged toward the upper surface of the wafer and a first valve configured to control a flow of the gas supplied into the processing chamber and discharged toward the upper surface of the wafer;
• an exhaust in fluid communication with the process chamber and configured to discharge the gas out of the processing chamber, wherein the exhaust has a second pressure sensor configured to detect a pressure of the gas passing through the exhaust and a second valve configured to control an open ratio of the exhaust;
• and
• a controller connected to the first pressure sensor, the first valve, the second pressure sensor and the second valve and configured to receive pressure data from the first pressure sensor and/or the second pressure sensor, analyze the received pressure date to determine whether the gas discharged toward the upper surface of the wafer is insufficient or excessive, and dynamically adjust the first valve and/or the second valve based on determination to maintain a balance condition of the gas discharged toward the upper surface of the wafer;
• wherein the first gas supply device has a gas nozzle substantially aligned with a central region of the upper surface of the wafer, and wherein the first gas supply device is configured to discharge the gas toward the upper surface of the wafer through the gas nozzle;
• wherein the processing portion has a processing solution nozzle substantially aligned with a central region of the lower surface of the wafer, and wherein the processing portion is configured to supply the processing solution to the lower surface of the wafer through the processing solution nozzle.