Microfluidic channels in a substrate with a surface covered by a layer stack
AssigneeGlobalFoundries U.S. Inc.
InventorsRamsey Hazbun, Siva P. Adusumilli, Mark Levy, Bartlomiej Jan Pawlak
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Abstract
Structures for a microfluidic channel and methods of forming a structure for a microfluidic channel. The structure comprises a semiconductor substrate including a trench and a layer stack on the semiconductor substrate. The layer stack includes a first layer, a second layer between the first layer and the semiconductor substrate, and an opening penetrating through the first layer and the second layer to the trench. The structure further comprises a third layer inside the opening in the layer stack. The third layer, which comprises a semiconductor material, obstructs the opening to define a cavity inside the trench.
Claims20
A structure comprising:
- a semiconductor substrate including a trench;
- a layer stack on the semiconductor substrate, the layer stack including a first layer, a second layer between the first layer and the semiconductor substrate, and an opening penetrating through the first layer and the second layer to the trench, and the first layer including a surface surrounding the opening;
- and
- a third layer inside the opening in the layer stack, the third layer comprising a semiconductor material, the third layer is in direct contact with the surface of the first layer, and the third layer occluding the opening to define a cavity inside the trench.
A structure comprising:
- a semiconductor substrate including a trench;
- a layer stack on the semiconductor substrate, the layer stack including a first layer, a second layer between the first layer and the semiconductor substrate, and an opening penetrating through the first layer and the second layer to the trench;
- and
- a third layer inside the opening in the layer stack, the third layer comprising a semiconductor material, and the third layer occluding the opening to define a cavity inside the trench,
- wherein the cavity has an inlet and an outlet, and the inlet and the outlet are each surrounded by a portion of the third layer.
A method comprising:
- forming a trench in a semiconductor substrate;
- forming a layer stack on the semiconductor substrate, wherein the layer stack includes a first layer, a second layer between the first layer and the semiconductor substrate, and an opening penetrating through the first layer and the second layer to the trench;
- and
- forming a third layer inside the opening in the layer stack, wherein the third layer comprises a semiconductor material, and the third layer obstructs the opening to define a cavity inside the trench,
- wherein the first layer includes a surface surrounding the opening, and the third layer is in direct contact with the surface of the first layer.
Dependencies are inferred from the claim text.