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US 12,520,652 B2Granted
Multilayer back contacts for perovskite photovoltaic devices
AssigneesFirst Solar, Inc., Alliance for Sustainable Energy, LLC
InventorsJoseph Jonathan Berry, Le Chen, Axel Finn Palmstrom, Tze-Bin Song, Vera Steinmann, Natasha Teran, Aravamuthan Varadarajan, Xueping Yi, Zhibo Zhao, Kai Zhu
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Abstract
Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include back contacts for N-I-P structures.
Claims16
A photovoltaic device comprising:
- a perovskite absorber layer,
- a hole transport layer over the perovskite absorber layer, and
- a back contact in contact with the hole transport material, wherein the back contact comprises:
- a conductor sublayer, comprising at least one metal;
- a barrier sublayer between the hole transport layer and the conductor sublayer, wherein the barrier sublayer comprises at least one of a transition metal nitride or a metal oxynitride;
- and
- a buffer sublayer,
- wherein the buffer sublayer is adjacent to the hole transport layer,
- the buffer sublayer comprises at least one of a metal oxide or a metal oxynitride;
- the buffer sublayer is disposed between the hole transport layer and the barrier sublayer;
- the buffer sublayer has a thickness less than 25 nm, and
- wherein the buffer sublayer and the barrier sublayer are made from different materials.
9 more elements
A back contact for a perovskite photovoltaic device, having a perovskite absorber layer and a hole transport layer, the back contact comprising:
- a buffer sublayer disposed adjacent to the hole transport layer,
- wherein the buffer sublayer has a thickness in a range of 1-30 nm, and
- the buffer sublayer comprises a metal oxide or a metal oxynitride;
- a barrier sublayer disposed adjacent to the buffer sublayer,
- wherein the barrier sublayer has a thickness in a range of 5-50 nm, and
- the barrier sublayer comprises a transition metal nitride or a metal oxynitride;
- and
- a conductor sublayer disposed over the buffer sublayer,
- wherein the conductor sublayer has a thickness in a range of 100-3500 nm, and
- the conductor sublayer comprises at least one material selected from:
- aluminum, copper or silver,
- wherein the buffer sublayer and the barrier sublayer are made from different materials.
9 more elements
Dependencies are inferred from the claim text.