Transistor and photoelectric sensor
AssigneeShanghai Tianma Microelectronics Co., Ltd.
InventorsYukun Huang, Linzhi Wang, Kerui Xi
Life of this patent
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Abstract
Provided are a transistor and a photoelectric sensor, the transistor includes a substrate and an active layer located on a side of the substrate; the active layer includes a source region, a drain region and a channel region located between the source region and the drain region, and in the channel region, the active layer includes a first active portion, a second active portion and a third active portion, the second active portion and the third active portion are respectively located on two opposite sides of the first active portion in a first direction, the second active portion is communicated with the source region in the active layer, and the third active portion is communicated with the drain region in the active layer.
Claims19
A transistor, comprising a substrate and an active layer located on a side of the substrate;
- wherein the active layer comprises a source region, a drain region and a channel region located between the source region and the drain region, and in the channel region, the active layer comprises a first active portion, a second active portion and a third active portion, the second active portion and the third active portion are respectively located on two opposite sides of the first active portion in a first direction, the second active portion is communicated with the source region in the active layer, and the third active portion is communicated with the drain region in the active layer, a thickness of at least part of the first active portion in a second direction is greater than a thickness of the second active portion in the second direction and greater than a thickness of the third active portion in the second direction;
- and
- wherein the first direction is parallel to a direction in which the source region points to the drain region, and the second direction is perpendicular to a top surface of the substrate,
- wherein the first active portion comprises a first active sub-portion, the first active sub-portion, the second active portion, and the third active portion are located on a same level in the second direction;
- the first active portion further comprises at least one of:
- a second active sub-portion, which is communicated with the first active sub-portion and is located on a side of the first active sub-portion facing the substrate;
- or
- a third active sub-portion, which is communicated with the first active sub-portion and is located on a side of the first active sub-portion facing away from the substrate.
A photoelectric sensor, comprising a transistor,
- wherein the transistor comprises a substrate and an active layer located on a side of the substrate;
- wherein the active layer comprises a source region, a drain region and a channel region located between the source region and the drain region, and in the channel region, the active layer comprises a first active portion, a second active portion and a third active portion, the second active portion and the third active portion are respectively located on two opposite sides of the first active portion in a first direction, the second active portion is communicated with the source region in the active layer, and the third active portion is communicated with the drain region in the active layer, a thickness of at least part of the first active portion in a second direction is greater than a thickness of the second active portion in the second direction and greater than a thickness of the third active portion in the second direction;
- and
- wherein the first direction is parallel to a direction in which the source region points to the drain region, and the second direction is perpendicular to a top surface of the substrate,
- wherein the first active portion comprises a first active sub-portion, the first active sub-portion, the second active portion, and the third active portion are located on a same level in the second direction;
- the first active portion further comprises at least one of:
- a second active sub-portion, which is communicated with the first active sub-portion and is located on a side of the first active sub-portion facing the substrate;
- or
- a third active sub-portion, which is communicated with the first active sub-portion and is located on a side of the first active sub-portion facing away from the substrate.
Dependencies are inferred from the claim text.