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AssigneeSouth China University of Technology
InventorsGuoqiang Li, Deqi Kong, Wenliang Wang, Liang Chen
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A molybdenum diselenide (MoSe2)/InGaN multispectral photoelectric detector includes a substrate, a buffer layer, an InGaN layer and a MoSe2 layer that are arranged sequentially from bottom to top. The MoSe2 layer partially covers the InGaN layer. The photoelectric detector further includes a barrier layer and an electrode layer. The barrier layer is provided on the InGaN layer not covered by the MoSe2 layer and on a part of the MoSe2 layer. The electrode layer is provided on the barrier layer and covers a part of an exposed portion of the MoSe2 layer. A preparation method of the detector is further provided. The detector detects red light and blue light at the same time. While realizing a sensitivity enhanced micro-nano structure on a surface of a detector chip, the detector improves quantum efficiency in blue and red bands, and enhances resonant absorption for the blue light and red light.
A molybdenum diselenide (MoSe2)/InGaN multispectral photoelectric detector, comprising a substrate, a buffer layer, an InGaN layer and a MoSe2 layer, wherein the substrate, the buffer layer, the InGaN layer and the MoSe2 layer are arranged sequentially from bottom to top, wherein the MoSe2 layer partially covers the InGaN layer;
The preparation method according to 7, wherein the buffer layer is prepared by sequentially and epitaxially growing an AlN layer, an AlGaN layer and a GaN layer on the substrate by MOCVD from bottom to top;
The preparation method according to 7, wherein the barrier layer and a metal electrode layer each have an evaporation rate of 0.23 nm/min to 0.28 nm/min.
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