Method and system for manufacturing integrated circuit device

A method, comprising:

• forming, over a substrate, a plurality of first well taps of a first type in a plurality of first columns and a plurality of first rows;
• and
• forming, over the substrate, a plurality of second well taps of a second type in a plurality of second columns and a plurality of second rows, the second type different from the first type,
• wherein
• the plurality of first rows and the plurality of second rows extend in a first direction,
• the plurality of first columns and the plurality of second columns are alternatingly arranged and spaced from each other in the first direction, and extend in a second direction transverse to the first direction,
• the first well taps in each first row among the plurality of first rows partially overlap, in the first direction, the second well taps in a corresponding second row among the plurality of second rows, and
• along the second direction, no first well tap among the plurality of first well taps overlaps any second well tap among the plurality of second well taps.

A method, comprising:

• forming, over a substrate,
• a plurality of first well regions of a first type,
• a plurality of second well regions of a second type different from the first type, wherein the plurality of first well regions and the plurality of second well regions extend in a first direction and are arranged alternatingly in a second direction transverse to the first direction, and
• a plurality of first connection well regions of the first type, wherein each first connection well region among the plurality of first connection well regions extends, in the second direction, between a pair of adjacent first well regions among the plurality of first well regions and across a second well region among the plurality of second well regions;
• forming, over the substrate, a plurality of second connection well regions of the second type, wherein each second connection well region among the plurality of second connection well regions extends, in the second direction, between a pair of adjacent second well regions among the plurality of second well regions and across a first well region among the plurality of first well regions;
• forming a plurality of first well taps, wherein each first well tap among the plurality of first well taps is formed over a corresponding first connection well region among the plurality of first connection well regions;
• and
• forming a plurality of second well taps, wherein each second well tap among the plurality of second well taps is formed over a corresponding second connection well region among the plurality of second connection well regions.