Thin film transistor including active layer heterostructure method of manufacturing same, and display panel
AssigneeWuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
InventorsHui Zheng, Wenxu Xianyu
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Abstract
The present disclosure provides a thin film transistor and a method of manufacturing the same, wherein the thin film transistor at least comprises a first gate electrode, a first insulating layer, an active layer, a source electrode and a drain electrode, a second insulating layer covering the active layer, the source electrode and the drain electrode, and a second gate electrode, wherein the active layer comprises a first active layer, a second active layer on the first active layer, and a third active layer on the second active layer; wherein the first active layer, the second active layer, and the third active layer may form a heterostructure.
Claims18
A thin film transistor, at least comprising:
- a first gate electrode;
- a first insulating layer covering the first gate electrode;
- an active layer located on the first insulating layer and corresponding to the first gate electrode, wherein the active layer comprises a first active layer, a second active layer located on the first active layer, and a third active layer located on the second active layer;
- a source electrode and a drain electrode both located on the first insulating layer and connected to two ends of the active layer, respectively, wherein the source electrode and the drain electrode are disposed on a same layer as the active layer;
- a second insulating layer covering the active layer, the source electrode and the drain electrode;
- and
- a second gate electrode located on the second insulating layer;
- wherein the first active layer, the second active layer, and the third active layer form a heterostructure, and the second insulating layer is in direct contact with the active layer, the source electrode, the drain electrode, and the second gate electrode.
A method of manufacturing a thin film transistor, at least comprising:
- forming a first gate electrode;
- forming a first insulating layer covering the first gate electrode;
- forming an active layer on the first insulating layer corresponding to the first gate electrode, wherein the active layer comprises a first active layer, a second active layer on the first active layer, and a third active layer on the second active layer, and the first active layer, the second active layer, and the third active layer form a heterostructure;
- forming a source electrode and a drain electrode on the first insulating layer, wherein the source electrode and the drain electrode are connected to two ends of the active layer, respectively, wherein the source electrode and the drain electrode are disposed on a same layer as the active layer;
- forming a second insulating layer covering the active layer, the source electrode, and the drain electrode;
- and
- forming a second gate electrode on the second insulating layer,
- wherein the second insulating layer is in direct contact with the active layer, the source electrode, the drain electrode, and the second gate electrode.
Dependencies are inferred from the claim text.