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US 12,520,533 B2Granted
Transistor device and gate structure
AssigneeWin Semiconductors Corp.
InventorsChang-Hwang Hua, Shu-Hsiao Tsai, Rong-Hao Syu, Chun-Han Song, Pei-Ying Wu, Zong-Zheng Yan
Life of this patent
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Abstract
A transistor device includes a substrate and a gate structure. The gate structure is disposed on the substrate. The gate structure includes a first metal layer and a refractory metal layer disposed on the first metal layer, wherein the first metal layer is disconnected and the refractory metal layer is disconnected.
Claims19
A transistor device, comprising:
- a gate structure disposed on a substrate and comprising:
- a first metal layer;
- and
- a refractory metal layer disposed on the first metal layer, comprising a lower portion and an upper portion which are separate, wherein a part of a surface of the upper portion of the refractory metal layer is curved,
- wherein the first metal layer has two separate portions.
2 more elements
A transistor device, comprising:
- a gate structure disposed on a plurality of semiconductor layers and comprising:
- a first metal layer;
- at least one refractory metal layer disposed on the first metal layer comprising a lower portion and an upper portion which are separate, wherein a part of a surface of the upper portion of the refractory metal layer is curved;
- and
- a second metal layer disposed on the refractory metal layer;
- and
- a passivation layer surrounding the gate structure and in contact with the first metal layer and the refractory metal layer at a bottom portion of the gate structure.
4 more elements
A gate structure, comprising:
- a sinking layer comprising a first lower portion and a first upper portion which are separate;
- a refractory metal layer comprising a second lower portion and a second upper portion which are separate, wherein the second lower portion is disposed on the first lower portion and the second upper portion is disposed on the first upper portion, wherein a part of a surface of the upper portion of the refractory metal layer is curved;
- and
- a contact layer disposed on the refractory metal layer.
1 more element
Dependencies are inferred from the claim text.