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US 12,520,501 B2Granted
Chalcogenide material and semiconductor device including the same
AssigneeSK hynix Inc.
InventorsGwang Sun Jung, Jun Ku Ahn, Sung Lae Cho, Uk Hwang
Life of this patent
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Abstract
Disclosed is a chalcogenide material including germanium (Ge), selenium (Se), arsenic (As), silicon (Si) and indium (In). In the chalcogenide material, a content of selenium (Se) is 49 at % to 56 at %, a content of indium (In) is 1.1 at % or less, and a sum of contents of germanium (Ge) and silicon (Si) is 18 at % to 21 at %.
Claims19
A chalcogenide material comprising germanium (Ge), selenium (Se), arsenic (As), silicon (Si), and indium (In),
- wherein, in the chalcogenide material, a content of selenium (Se) is 49 at % to 56 at %, a content of indium (In) is 1.1 at % or less, and a sum of contents of germanium (Ge) and silicon (Si) is 18 at % to 21 at %, and
- wherein a mean coordination number of the chalcogenide material is 2.60 to 2.68.
A semiconductor device comprising:
- a first electrode;
- a second electrode;
- and
- a first variable resistance layer positioned between the first electrode and the second electrode, and including a chalcogenide material,
- wherein the chalcogenide material includes germanium (Ge), selenium (Se), arsenic (As), silicon (Si), and indium (In), and has a mean coordination number of 2.60 to 2.68.
2 more elements
A chalcogenide material comprising germanium (Ge), selenium (Se), arsenic (As), silicon (Si), and indium (In),
- wherein a mean coordination number of the chalcogenide material is 2.60 to 2.68.
Dependencies are inferred from the claim text.