System, electronic device and package with vertical to horizontal substrate integrated waveguide transition and horizontal grounded coplanar waveguide transition

A multilevel package substrate, comprising:

• opposite first and second sides extending in respective first and second planes of orthogonal first and second directions, the first and second planes spaced apart from one another along a third direction that is orthogonal to the first and second directions;
• first, second, and third levels;
• a horizontal substrate integrated waveguide (SIW) that includes a first set of conductive features of the first and second levels that surround a channel that extends along the second direction,
• a vertical SIW including a second set of conductive features of the first, second and third levels that surround an opening that extends along the third direction to the first side;
• a grounded coplanar waveguide (GCPW);
• a first transition including a signal trace and a ground trace in the first level that connect the horizontal SIW to the GCPW along the second side;
• and
• a second transition including a conductive cover feature of the first level that extends over the opening of the vertical SIW.

A system, comprising:

• a printed circuit board (PCB) having a conductive structure to connect to a vertical substrate integrated waveguide (SIW);
• and
• an electronic device attached to the PCB and comprising a multilevel package substrate, a semiconductor die, and a package structure that encloses the semiconductor die and a portion of the multilevel package substrate;
• the multilevel package substrate having a first side, a second side, a first level, a second level, a third level, a horizontal substrate integrated waveguide (SIW), a vertical SIW, a grounded coplanar waveguide (GCPW), a first transition, and a second transition, the first side extending in a first plane of orthogonal first and second directions, the second side extending in a second plane of the first and second directions, the first and second planes spaced apart from one another along a third direction that is orthogonal to the first and second directions, the horizontal SIW including a first set of conductive features of the first and second levels that surround a channel that extends along the second direction, the first transition including a signal trace and a ground trace in the first level that connect the horizontal SIW to the GCPW along the second side, the vertical SIW including a second set of conductive features of the first, second and third levels that surround an opening that extends along the third direction to the first side, the second transition including a conductive cover feature of the first level that extends over the opening of the vertical SIW;
• and
• the semiconductor die attached to the second side of the multilevel package substrate and having a first conductive structure coupled to the signal trace and a second conductive structure coupled to the ground trace.

A method of fabricating an electronic device, the method comprising:

• fabricating a multilevel package substrate having:
• opposite first and second sides extending in respective first and second planes of orthogonal first and second directions, the first and second planes spaced apart from one another along a third direction that is orthogonal to the first and second directions;
• a first level;
• a second level;
• a third level;
• a horizontal substrate integrated waveguide (SIW);
• a vertical SIW;
• a grounded coplanar waveguide (GCPW);
• a first transition;
• and a second transition, the horizontal SIW including a first set of conductive features of the first and second levels that surround a channel that extends along the second direction, the first transition including a signal trace and a ground trace in the first level that connect the horizontal SIW to the GCPW along the second side, the vertical SIW including a second set of conductive features of the first, second and third levels that surround an opening that extends along the third direction to the first side, the second transition including a conductive cover feature of the first level that extends over the opening of the vertical SIW;
• attaching a semiconductor die to the second side of the multilevel package substrate;
• coupling a first conductive structure of the semiconductor die to the signal trace, coupling a second conductive structure of the semiconductor die to the ground trace;
• and
• forming a package structure that encloses the semiconductor die and a portion of the multilevel package substrate.