Semiconductor device including a memory stack and a contact structure in a spacer structure

A semiconductor device, comprising:

• an insulating layer;
• a conductive layer stacking with the insulating layer;
• a memory stack comprising a plurality of interleaved second conductor layers and dielectric layers, disposed on a side of the conductive layer away from the insulating layer;
• a spacer structure through the conductive layer;
• a contact structure in the spacer structure and extending vertically through the insulating layer;
• an insulating spacer extending vertically through the memory stack to the conductive layer;
• and
• a source contact structure extending vertically through the insulating layer and in contact with the conductive layer and the insulating layer,
• wherein a distance between the source contact structure and the memory stack is larger than a distance between an end of the insulating spacer and the memory stack.

A semiconductor device, comprising:

• an insulating layer;
• a conductive layer stacking with the insulating layer;
• a memory stack comprising a plurality of interleaved second conductor layers and dielectric layers, disposed on a side of the conductive layer away from the insulating layer;
• a spacer structure through the conductive layer;
• a contact structure in the spacer structure and extending vertically through the insulating layer;
• and
• a source contact structure extending vertically through the insulating layer and in contact with the conductive layer and the insulating layer,
• wherein the spacer structure comprises a dielectric material.